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首页> 外文会议>Dry Etch Technology >Interferometric monitoring and control of silicon incorporation in the diffusion-enhanced silylated resist process
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Interferometric monitoring and control of silicon incorporation in the diffusion-enhanced silylated resist process

机译：扩散增强甲硅烷基抗蚀剂工艺中硅掺入的干涉测量和控制

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Abstract: The diffusion enhanced silylated resist or DESIRE process is a well known surface imaging lithographic technique consisting of three steps: exposure, silylation, and dry develop. The success of this method for patterning submicron features depends critically on controlling silicon incorporation in the resist. In this report, interferometric data obtained during the resist silylation step and subsequent dry develop etch have been used to correlate silylation parameters and exposure dose with the depth of silicon incorporation. Contrast and linewidth variation as a function of silylation depth have been derived. A kinetics model in conjunction with image intensity simulations has been used to understand the effect of process parameters on pattern quality. The potential of using the interferometric data for process monitoring is also discussed.!13
机译：摘要：扩散增强的硅烷化抗蚀剂或DESIRE工艺是一种众所周知的表面成像光刻技术，包括三个步骤：曝光，甲硅烷基化和干法显影。该用于图案化亚微米特征的方法的成功关键取决于控制抗蚀剂中硅的掺入。在该报告中，在抗蚀剂甲硅烷基化步骤和随后的干显影蚀刻过程中获得的干涉数据已用于将甲硅烷基化参数和曝光剂量与硅掺入深度相关联。已经得出了对比度和线宽变化与甲硅烷基化深度的关系。结合图像强度模拟的动力学模型已用于了解工艺参数对图案质量的影响。还讨论了将干涉测量数据用于过程监控的潜力。13

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