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首页> 外文会议>Electronic Components Technology Conference, 1998. 48th IEEE >Computational simulation of underfill encapsulation of flip-chip ICs. I. Flow modeling and surface-tension effects
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Computational simulation of underfill encapsulation of flip-chip ICs. I. Flow modeling and surface-tension effects

机译：倒装芯片IC底部填充封装的计算仿真。 I.流动建模和表面张力效应

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This paper presents a computational technique for time-accurate prediction of the filling pattern during underfill encapsulation of flip-chip ICs. In order to accurately track the propagation of the resin front while taking into account the geometry of the underfill cavity, including bumps and edges, as well as all the boundary conditions that are transmitted to the resin front through the air, a two-phase model of the combined flow of resin and air in the underfill cavity is used. The two-phase flowfield is modeled using a Volume-of-Fluid (VOF) methodology embedded in a general-purpose, three-dimensional, flow-solver. A new surface-tension model is developed for computing the capillary-action forces that are exerted on the resin front and which drive the flow in underfill encapsulation processes.
机译：本文提出了一种用于倒装芯片IC底部填充封装过程中时间精确预测填充图案的计算技术。为了精确跟踪树脂前沿的传播，同时考虑到底部填充腔的几何形状（包括凸块和边缘）以及通过空气传输到树脂前沿的所有边界条件，采用了两相模型在底部填充腔中使用了树脂和空气的混合流。两相流场使用嵌入在通用的三维流动求解器中的体积（VOF）方法进行建模。开发了一种新的表面张力模型，用于计算施加在树脂前端的毛细作用力，该毛细作用力在底部填充封装过程中驱动流动。

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