Advanced heterostructure Si-InSb on insulator formed by bonding of hydrogen transferred Si layer and implanted SiO_2 film

机译：通过氢转移硅层和注入的SiO_2膜的结合形成的绝缘体上的高级异质结构Si-InSb

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Using bulk silicon may be limited for 22 nm technological node due to silicon mobility limitation. New type of substrates needs for further scaling in CMOS microelectronics. We speculate that this new type of materials can be semiconductor heterostructure on insulator (HOI) compatible with current silicon planar CMOS technology. In this work an effect of interface mediated endotaxial (IME) growth of thin InSb film at Si/SiO_2 bonded interface was experimentally observed and investigated for the first time. Joint semiconductor material stack obtained by hydrogen transfer of one layer material (silicon) and endotaxially grown second one (indium antimonide) placed initially into amorphous silicon dioxide film is presented. Thermodynamic, kinetic and lattice mismatch parameter influences on IME process are considered.

机译：由于硅迁移率限制，使用体硅可能会限制在22 nm工艺节点上。新型基板需要进一步缩小CMOS微电子器件的尺寸。我们推测这种新型材料可以是与当前硅平面CMOS技术兼容的绝缘体上的半导体异质结构（HOI）。在这项工作中，首次通过实验观察和研究了界面介导的InSb薄膜在Si / SiO_2键合界面处的内插外延（IME）生长的影响。提出了通过氢转移一层材料（硅）和内延生长的第二种材料（锑化铟）获得的联合半导体材料叠层，所述第二种材料最初放置在非晶态二氧化硅膜中。考虑了热力学，动力学和晶格失配参数对IME工艺的影响。

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《Electrochemical Society(ECS) Meeting;International Symposium on Silicon-on-Insulator Technology and Devices; 20070506-11;20070506-11; Chicago,IL(US);Chicago,IL(US)》|2007年|P.345350|共2页
会议地点 ChicagoIL(US);ChicagoIL(US)
作者
V. P. Popov; I. E.Tyschenko; A. G. Cherkov; G. P. Pokhil; V. M. Fridman; M. Voelskow;
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Institute of Semiconductor Physics, Novosibirsk 630090, Russia;

MSU Research Institute of Nuclear Physics, Moscow, 119992, Russia;

Institute of Ion Beam Physics and Material Research, 01314 Dresden, Germany;

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专利

1. SiGe heterostructures-on-insulator produced by Ge+-ion implantation and subsequent hydrogen transfer [J] . I. E. Tyschenko, A. G. Cherkov, M. Voelskow, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2008,第0期

机译：Ge +离子注入和随后的氢转移产生的绝缘体上的SiGe异质结构
2. Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation [J] . Lin Shao, Yuan Lin, J. K. Lee, Applied Physics Letters . 2005,第9期

机译：应变氢化Si / SiGe / Si异质结构的等离子体氢化，无需离子注入即可进行层转移
3. The formation mechanism of globally biaxial strain in He~+ implanted silicon-on-insulator wafer based on the plastic deformation and smooth sliding of buried SiO_2 film [J] . Miao Dongming, Wu Shujing, Dai Xianying, Applied Physics Letters . 2018,第22期

机译：基于埋藏SiO_2薄膜的塑性变形和光滑滑动的He〜+注入绝缘体上硅晶片的整体双轴应变形成机理
4. Advanced heterostructure Si-InSb on insulator formed by bonding of hydrogen transferred Si layer and implanted SiO_2 film [C] . V. P. Popov, I. E.Tyschenko, A. G. Cherkov, Electrochemical Society Meeting . 2007

机译：通过氢转移Si层的粘合和植入的SiO_2膜形成的绝缘体上的先进异质结构Si-Ins。
5. Semiconductor thin film transfer by wafer bonding and advanced ion implantation layer splitting technologies. [D] . Lee, Tien-Hsi. 1998

机译：通过晶圆键合和先进的离子注入层分离技术进行半导体薄膜转移。
6. Total Synthesis of (+)-Trienomycins A and F via C-C Bond-Forming Hydrogenation and Transfer Hydrogenation [O] . David J. Del Valle, Michael J. Krische -1

机译：通过C-C键形成加氢和转移加氢全合成（+）-曲安霉素A和F
7. Plasma hydrogenation of strained Si/SiGe/Si heterostructure for layer transfer without ion implantation [O] . Shao L, Lin Y, Lee JK, 2005

机译：应变氢化Si / SiGe / Si异质结构的等离子体氢化，无需离子注入即可进行层转移
8. Role of implantation damage in the production of silicon-on- insulator films by co-Implantation of He(sup +) and H(sup +) [R] . Venezia, V. C., Agarwal, A., Haynes, T. E., 1998

机译：植入损伤在He（sup +）和H（sup +）共同注入生产绝缘体上硅薄膜中的作用

Advanced heterostructure Si-InSb on insulator formed by bonding of hydrogen transferred Si layer and implanted SiO_2 film

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