Assessment of the CBR quantum transport simulator on experimentally fabricated nano-FinFET

机译：在实验制造的纳米FinFET上评估CBR量子传输模拟器

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We have utilized fully self-consistent quantum mechanical simulator based on Contact Block Reduction (CBR) method, to simulate experimentally fabricated 10nm FinFET device. A series of simulations have been performed with varying S/D extension length and doping profile to match the experimental data. The simulation results have been found to be in good agreement with the experimental data in the subthreshold regime. Small signal analysis has been performed to extract device capacitances and to compare the intrinsic propagation delay to that of experimental device.

机译：我们已经利用基于接触块减少（CBR）方法的完全自洽量子力学模拟器来模拟实验制造的10nm FinFET器件。已经使用不同的S / D延伸长度和掺杂轮廓进行了一系列仿真，以匹配实验数据。已经发现模拟结果与亚阈值范围内的实验数据非常吻合。已经进行了小信号分析，以提取器件电容并将本征传播延迟与实验器件的传播延迟进行比较。

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《Electrochemical Society(ECS) Meeting;International Symposium on Silicon-on-Insulator Technology and Devices; 20070506-11;20070506-11; Chicago,IL(US);Chicago,IL(US)》|2007年|P.197203|共2页
会议地点 ChicagoIL(US);ChicagoIL(US)
作者
H. Khan; D. Mamaluy; D. Vasileska;
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Department of Electrical Engineering, Arizona State University, Arizona 85287, USA;

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正文语种 eng
中图分类材料;
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专利

1. Quantum Transport Simulation of Experimentally Fabricated Nano-FinFET [J] . Hasanur R. Khan, Denis Mamaluy, Dragica Vasileska IEEE Transactions on Electron Devices . 2007,第期

机译：实验制造的纳米FinFET的量子传输模拟
2. Quantum Transport Simulation of Experimentally Fabricated Nano-FinFET [J] . Khan H.R., Mamaluy D., Vasileska D. IEEE Transactions on Electron Devices . 2007,第4期

机译：实验制造的纳米FinFET的量子传输模拟
3. Uncontrolled disorder effects in fabricating photonic quantum simulators on a kagome geometry: A projected-entangled-pair-state versus exact-diagonalization analysis [J] . Amin Hosseinkhani, Bahareh Ghannad Dezfouli, Fatemeh Ghasemipour, Physical Review, A. Atomic, molecular, and optical physics . 2014,第6aPta1期

机译：在kagome几何上制造光子量子模拟器中的不受控制的无序效应：投影纠缠对态与精确对角化分析
4. Assessment of the CBR quantum transport simulator on experimentally fabricated nano-FinFET [C] . H. Khan, D. Mamaluy, D. Vasileska Electrochemical Society Meeting . 2007

机译：评估在实验制造的纳米FINFET上的CBR量子传输模拟器
5. Experimentally Validated Quantum Transport Models for Tunneling Devices Based on Novel Materials [D] . Ameen Beshari, Tarek A. 2018

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6. Stochastic Schrödinger Equations and Conditional States: A General Non-Markovian Quantum Electron Transport Simulator for THz Electronics [O] . Devashish Pandey, Enrique Colomés, Guillermo Albareda, 2019

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7. Uncontrolled disorder effects in fabricating photonic quantum simulators on a kagome geometry: A projected-entangled pair state versus exact digonalization analysis [O] . Hosseinkhani, Amin, Dezfouli, Bahareh Ghannad, Ghasemipour, Fatemeh, 2014

机译：制造光子量子模拟器时不受控制的无序效应在kagome几何上：投射纠缠对状态与精确对数字化分析

Assessment of the CBR quantum transport simulator on experimentally fabricated nano-FinFET

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