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首页> 外文会议>Electrochemical Society(ECS) Meeting;Symposium on Chemical Mechanical Polishing 8; 20061029-1103;20061029-1103; Cancun(MX);Cancun(MX) >Chemical-mechanical planarization compatible for both copper/lowk level in a 90 nm technology and thick copper level in an RF technology
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Chemical-mechanical planarization compatible for both copper/lowk level in a 90 nm technology and thick copper level in an RF technology

机译：化学机械平面化可兼容90 nm技术中的铜/低能级和RF技术中的厚铜能级

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摘要

The emergence of wireless communication technologies has increased the need for high performance radio frequency (RF) circuits as transceivers or filters (1). These functions imply high quality factor (Q) inductors. One way to reach such high Q value is to increase the ultimate copper thickness (above 3μm). Whereas Cu CMP has been widely reported as one of the leading techniques to integrate copper interconnects, many issues are still encountered for thick copper applications, where uniformity, topology and process time are major concerns. In this study, we develop a copper bulk CMP process compatible for both thick copper/low k interconnects and RF application. Starting from conventional sub-0.18μm slurry, an additive solution is added to enhance its removal rate. Results obtained on a 4 nm thick level are presented. It is shown that electrical performances are preserved, notably sheet resistance uniformity. Other usual CMP parameters, like planarization and consumables aging are also presented. The approach reported here, which emphasizes chemical contribution, is expected to make compatible slurries dedicated to sub-0.18μm copper/low k technologies with thick copper applications, while not inducing significant additional cost of ownership.
机译：无线通信技术的出现增加了对作为收发器或滤波器（1）的高性能射频（RF）电路的需求。这些功能意味着高品质因数（Q）电感器。达到如此高Q值的一种方法是增加最终的铜厚度（大于3μm）。尽管已经广泛报道了Cu CMP是集成铜互连的领先技术之一，但是对于厚铜应用而言，均匀性，拓扑和工艺时间是主要关注的问题，仍然遇到许多问题。在这项研究中，我们开发了一种适合厚铜/低k互连和RF应用的铜批量CMP工艺。从常规的小于0.18μm的浆料开始，添加添加剂溶液以提高其去除率。给出了在4 nm厚的水平上获得的结果。结果表明，保持了电性能，尤其是薄层电阻均匀性。还介绍了其他常用的CMP参数，例如平面化和易损件老化。此处报道的方法强调化学贡献，预计将使专用于0.18μm以下铜/低k技术的浆液与厚铜应用兼容，同时不会引起显着的额外拥有成本。

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