• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR >MULTI-FIN DOUBLE-GATE MOSFET FBRICATED BY USING (110)-ORIENTED SOI WAFERS AND ORIENTATION-DEPENDENT ETCHING
【24h】

MULTI-FIN DOUBLE-GATE MOSFET FBRICATED BY USING (110)-ORIENTED SOI WAFERS AND ORIENTATION-DEPENDENT ETCHING

机译：通过使用（110）定向的SOI晶片和定向相关的蚀刻来制造多鳍双栅MOSFET

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have been succeeded in fabricating the Multi-Fin double-gate MOSFET (MFXMOSFET) with an ideal rectangular silicon (Si)-Fin cross-section, for the first time, by using (110)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent etching. In the fabrication of the nanoscale Si-Fin, a 2.38% tetramethylammonium hydroxide (TMAH) solution was used as an anisotropic etchant. Nanoscale alignment in electron beam (EB) lithography was realized with auto-chip marker detection and auto-stepping techniques. The electrical characteristics of the fabricated MFXMOSFETs with a number of 30-nm Si-Fins have been investigated and the accurate current and transconductance multiplication was confirmed. The measured subthreshold slopes (S-slope) for the fabricated MFXMOSFETs with a 365-nm gate length show the same value of 60 mV/decade independent on the number of Si-Fins. These results indicate that very uniform and quality Si-Fins can be fabricated by using the proposed orientation-dependent etching.
机译：我们首次成功地通过使用（110）取向绝缘体上硅（SOI）来制造具有理想矩形硅（Si）-Fin横截面的多鳍双栅MOSFET（MFXMOSFET） ）晶圆和与方向有关的蚀刻。在纳米级Si-Fin的制造中，将2.38％的四甲基氢氧化铵（TMAH）溶液用作各向异性蚀刻剂。通过自动芯片标记检测和自动步进技术实现了电子束（EB）光刻中的纳米级对准。已经研究了制造的具有30nm Si-Fin的MFXMOSFET的电特性，并确认了精确的电流和跨导倍增。对于栅极长度为365 nm的MFXMOSFET，所测量的亚阈值斜率（S斜率）与Si-Fin的数量无关，显示出相同的60 mV /十倍值。这些结果表明，通过使用所提出的与方向有关的刻蚀，可以制造出非常均匀和高质量的Si-Fin。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号