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首页> 外文会议>Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR >EFFECTS OF NITRIDATION TREATMENT FOR ELECTRICAL PROPERTIES OFMONOS NONVOLATILE MEMORIES
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EFFECTS OF NITRIDATION TREATMENT FOR ELECTRICAL PROPERTIES OFMONOS NONVOLATILE MEMORIES

机译：氮化处理对MONOS非挥发性记忆体电学性质的影响

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摘要

The mechanism that causes decreasing data erase time and data retention time of MONOS nonvolatile memories when nitridation is applied to the tunnel oxide film was investigated. The data erase time and the data retention time of MONOS nonvolatile memories decreased as nitrogen concentration in tunnel oxide film increased. Hole current increased as nitrogen concentration in the film increased, but electron current did not change. The hole current increased as temperature increased, but the electron current did not change. The activation energy of the hole current in a tunnel oxide film of 0.12-0.14 eV was obtained. These results suggest that nitrogen atoms penetrate into tunnel oxide film during nitridation and hole traps are generated in it. Thus, hole traps cause the hole current through the tunnel oxide film to increase, and thereby, decrease the data erase time and data retention time of MONOS nonvolatile memories.
机译：研究了在隧道氧化膜上进行氮化时导致MONOS非易失性存储器的数据擦除时间和数据保留时间减少的机制。 MONOS非易失性存储器的数据擦除时间和数据保留时间随着隧道氧化膜中氮浓度的增加而减少。空穴电流随着膜中氮浓度的增加而增加，但是电子电流没有变化。空穴电流随着温度的升高而增加，但是电子电流没有变化。获得0.12-0.14eV的隧道氧化膜中的空穴电流的活化能。这些结果表明，氮原子在氮化过程中会渗入隧道氧化膜，并在其中产生空穴陷阱。因此，空穴陷阱使通过隧道氧化膜的空穴电流增加，从而减少了MONOS非易失性存储器的数据擦除时间和数据保持时间。

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