CLEANING FOR SUB 0.1 μm TECHNOLOGY: A PARTICULAR CHALLENGE

机译：小于0.1μm技术的清洁：一个特殊的挑战

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In wafer surface cleaning, equilibrium is supposed between particle removal and addition. Using a new statistical method that is based on this hypothesis, and data from a production fab, the particle addition and removal of a cleaning process are calculated. A correlation between particles added in a cleaning tool and capacitor yield is found. The data used are from mature fabs with a liberal minimum feature size and a modern surface-particle counter. Solely because of the limitation of metrology tools, particles monitoring in fabs with technology smaller than 0.1 μm would involve particle sizes that are too large to allow proper statistical control of process equipment. Apart from this process control issue, removal of particles selectively in respect to damage features on the surface will become problematic. To monitor particle removal, there is a strong need for standard particle-contaminated wafers having a relation with the actual production process.

机译：在晶片表面清洁中，假定在颗粒去除和添加之间达到平衡。使用基于该假设的新统计方法以及生产工厂的数据，可以计算出清洁过程中的颗粒添加和清除。发现清洁工具中添加的颗粒与电容器成品率之间存在相关性。所使用的数据来自具有自由的最小特征尺寸和现代表面粒子计数器的成熟晶圆厂。仅由于计量工具的局限性，技术小于0.1μm的晶圆厂中的颗粒监测将涉及太大的颗粒尺寸，无法对工艺设备进行适当的统计控制。除了该过程控制问题之外，针对表面上的损坏特征选择性地去除颗粒将成为问题。为了监测颗粒的去除，强烈需要与实际生产过程相关的标准颗粒污染的晶片。

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《Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR》|2003年|P.349-360|共12页
会议地点 Paris(FR);Paris(FR)
作者
D. Martin Knotter;
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作者单位

Cleaning Expertise Center, Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, the Netherlands;

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原文格式 PDF
正文语种 eng
中图分类大规模集成电路、超大规模集成电路;
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CLEANING FOR SUB 0.1 μm TECHNOLOGY: A PARTICULAR CHALLENGE

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