EXTREMELY SCALED ULTRA-THIN-BODY AND FINFET CMOS DEVICES

机译：极小型超薄体和FINFET CMOS器件

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Advanced transistor structures such as the single-gate UTB-FET and double-gate FinFET provide a technological pathway for scaling silicon-based CMOS technology into the nanoscale (sub-10 nm gate length) regime. This paper describes recent progress toward the development of high-performance CMOS technology utilizing these structures, as well as remaining challenges.

机译：诸如单栅极UTB-FET和双栅极FinFET之类的先进晶体管结构提供了将基于硅的CMOS技术缩放至纳米级（栅极长度小于10 nm）的技术途径。本文介绍了利用这些结构开发高性能CMOS技术的最新进展以及尚存的挑战。

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《Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR》|2003年|P.534-545|共12页
会议地点 Paris(FR);Paris(FR)
作者
Sriram Balasubramanian; Leland Chang; Yang-Kyu Choi; Daewon Ha; Jeongsoo Lee; Pushkar Ranade; Shiying Xiong; Jeffrey Bokor; Chenming Hu; Tsu-Jae King;
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Electrical Engineering and Computer Sciences, The University of California at Berkeley Berkeley, California 94720 USA;

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原文格式 PDF
正文语种 eng
中图分类大规模集成电路、超大规模集成电路;
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1. Thermal and plasma treatments for improved (sub-)1 nm equivalent oxide thickness planar and FinFET-based replacement metal gate high-k last devices and enabling a simplified scalable CMOS integration scheme [J] . Anabela Veloso, Guillaume Boccardi, Lars-Ake Ragnarsson, Japanese journal of applied physics . 2014,第4S期

机译：热处理和等离子处理，用于改进（小于）1 nm等效氧化物厚度的平面和基于FinFET的替代金属栅极高k后器件，并支持简化的可扩展CMOS集成方案
2. A simulation-based preview of extremely scaled double-gate CMOS devices and circuits [J] . Jerry G. Fossum International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2002,第2期

机译：基于仿真的超大规模双栅极CMOS器件和电路的预览
3. Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate [J] . Aktakka E.E., Ghafouri N., Smith C.E., IEEE Electron Device Letters . 2013,第10期

机译：SoI衬底上碲化铋和碲化锑薄膜热电器件的CMOS FinFET集成
4. EXTREMELY SCALED ULTRA-THIN-BODY AND FINFET CMOS DEVICES [C] . Sriram Balasubramanian, Leland Chang, Yang-Kyu Choi, Electrochemical Society Meeting and International Symposium on Silicon-on-Insulator Technology and Devices XI; 20030428-20030502; Paris; FR . 2003

机译：极小型超薄体和FINFET CMOS器件
5. Predictive Modeling for Extremely Scaled CMOS and Post Silicon Devices [D] . Wang, Chi-Chao 2011

机译：超大规模CMOS和后硅器件的预测建模
6. Dynamic pH Sensor with Embedded Calibration Scheme by Advanced CMOS FinFET Technology [O] . Chien-Ping Wang, Ying-Chun Shen, Peng-Chun Liou, 2019

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7. Impact of Device Parameteres of Triple Gate SOI-FINFET on the Performance of CMOS Inverter at 22NM [O] . Prathima A., Kiran Bailey ., K.S.Gurumurthy . 2015

机译：三栅极sOI-FINFET器件参数对22Nm CmOs逆变器性能的影响

EXTREMELY SCALED ULTRA-THIN-BODY AND FINFET CMOS DEVICES

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