Abstract: In this paper we present the activities at the Centerfor X-ray Lithography (CXrL) that are dedicated toapplying x-ray lithography to 0.25 $mu@m processing. Wefirst present the results of optimizing the parametersof the x-ray resist, AZ-PF 514, to achieve 0.25 micronfeatures with variations of less than 10%; second, wediscuss the properties of an exposure station (ES3)that feeds the in-house built aligner; third, wepresent the novel in-house built Two State Aligner(TSA) and its ability to achieve $LS 32 nm registrationerror; fourth, we present a developed fabricationprocess that produces masks with the required membranestress, optical transparency, and mask flatness; andfinally, we present the integration of all the abovesubprocesses by showing preliminary results from thein- progress 0.25 $mu@m NMOS device run. Therequirements and results of each sub-process arediscussed and judged according to the 0.25 $mu@m errorbudget goals that were initially set for 1997. !11
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机译：摘要：在本文中，我们介绍了X射线光刻中心（CXrL）的活动，这些活动致力于将X射线光刻技术应用于0.25 $μm的处理。我们首先介绍优化X射线抗蚀剂AZ-PF 514的参数以实现0.25微米特征且变化小于10％的结果。其次，我们讨论曝光台（ES3）的特性，该曝光台为内部内置的对准仪供料；第三，我们提出了一种新颖的内部内置的二态对准器（TSA）及其实现$ LS 32 nm配准误差的能力。第四，我们提出了一种开发的制造工艺，该工艺可生产具有所需膜应力，光学透明度和掩模平坦度的掩模；最后，我们通过展示正在进行的0.25μmNMOS器件运行的初步结果，介绍了上述所有子过程的集成。根据最初为1997年设定的0.25μm错误预算目标，讨论和判断每个子过程的要求和结果！11
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