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首页> 外文会议>Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV >Rule-based approach to e-beam and process-induced proximity effectcorrection for phase-shifting mask fabrication,
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Rule-based approach to e-beam and process-induced proximity effectcorrection for phase-shifting mask fabrication,

机译：基于规则的电子束和过程引起的相移掩膜制造的邻近效应校正方法，

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Abstract: A rule-based compensation for mask feature dimensions is proposed. This technique is based on the post-process measurement of select pattern configurations. These include isolated lines, isolated spaces, and lines and spaces ranging from 5 $mu@m to below 0.5 $mu@m on a test vehicle mask. The difference between the coded size and the measured size is then plotted as a function of the target dimension. Using these data in conjunction with some choice `2D'-type patterns, a size correction is made for each distinct feature based upon the feature dimensions and its distance to the nearest neighbor. Given an effective rule representation, pattern corrections can be viably implemented on a chip scale by an automated feature compensation CAD system. The potential causes for proximity effect in our phase-shifting mask fabrication process and effectiveness of the proposed correction technique are also investigated. !0
机译：摘要：提出了一种基于规则的掩模特征尺寸补偿方法。该技术基于所选图案配置的后处理测量。这些包括隔离线，隔离空间，以及在测试车辆面罩上的范围从5μm至低于0.5μm的线和空间。然后，将编码尺寸和测量尺寸之间的差异作为目标尺寸的函数进行绘制。将这些数据与某些“ 2D”类型的图案结合使用，可以根据特征尺寸及其与最近邻居的距离对每个不同的特征进行尺寸校正。给定有效的规则表示，可以通过自动特征补偿CAD系统在芯片规模上切实可行地实施模式校正。还研究了在我们的相移掩模制造过程中接近效应的潜在原因以及所提出的校正技术的有效性。 ！0

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