Rule-based approach to e-beam and process-induced proximity effect correction for phase-shifting mask fabrication

机译：基于规则的电子束和工艺引起的相移掩模制造的邻近效应校正方法

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Abstract: A rule-based compensation for mask feature dimensionsis proposed. This technique is based on thepost-process measurement of select patternconfigurations. These include isolated lines, isolatedspaces, and lines and spaces ranging from 5 $mu@m tobelow 0.5 $mu@m on a test vehicle mask. The differencebetween the coded size and the measured size is thenplotted as a function of the target dimension. Usingthese data in conjunction with some choice `2D'-typepatterns, a size correction is made for each distinctfeature based upon the feature dimensions and itsdistance to the nearest neighbor. Given an effectiverule representation, pattern corrections can be viablyimplemented on a chip scale by an automated featurecompensation CAD system. The potential causes forproximity effect in our phase-shifting mask fabricationprocess and effectiveness of the proposed correctiontechnique are also investigated. !0

机译：摘要：提出了一种基于规则的掩模特征尺寸补偿方法。该技术基于对选定模式配置的后处理测量。这些包括隔离的线，隔离的空间，以及在测试车辆面罩上的范围从5μm至低于0.5μm的线和空间。然后，根据目标尺寸绘制编码尺寸和测量尺寸之间的差异。将这些数据与某些选择的“ 2D”类型图案结合使用，可以根据特征尺寸及其与最近邻居的距离，对每个不同的特征进行尺寸校正。给定有效的规则表示，可以通过自动特征补偿CAD系统在芯片规模上可行地实施图案校正。还研究了在我们的相移掩模制造过程中产生邻近效应的潜在原因以及所提出的校正技术的有效性。！0

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《Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV》|1994年|p.298-309|共12页
会议地点 San Jose CA(US)
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Author(s): Christophe Pierrat ATT Bell Labs. Murray Hill NJ USA; Joseph G. Garofalo ATT Bell Labs. Murray Hill NJ USA; J.DeMarco ATT Bell Labs. Murray Hill NJ USA; Sheila Vaidya ATT Bell Labs. Murray Hill NJ USA; Oberdan W. Otto Trans;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Mask process proximity correction for next-generation mask fabrication [J] . Soon Ho Kim, Sung-Woon Choi, Jung-Min Sohn, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第6期

机译：用于下一代掩模制造的掩模工艺邻近校正
2. Implementation of E-Beam Proximity Effect Correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas [J] . Filiz Yesilkoy, Kwangsik Choi, Mario Dagenais, Solid-State Electronics . 2010,第10期

机译：使用线性编程技术制造非对称领结天线的电子束邻近效应校正
3. PYRAMID-a hierarchical, rule-based approach toward proximity effect correction. II. Correction [J] . Cook B.D., Soo-Young Lee IEEE Transactions on Semiconductor Manufacturing . 1998,第1期

机译：PYRAMID-一种基于层次的，基于规则的接近度校正方法。二。更正
4. Rule-based approach to e-beam and process-induced proximity effectcorrection for phase-shifting mask fabrication, [C] . Christophe Pierrat, ATT Bell Labs., Murray Hill, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV . 1994

机译：基于规则的电子束和过程引起的相移掩膜制造的邻近效应校正方法，
5. Implementation of e-beam proximity effect correction using linear programming techniques for the fabrication of asymmetric bow-tie antennas . [D] . Yesilkoy, Filiz. 2010

机译：使用线性编程技术实施电子束邻近效应校正，以制造非对称领结天线。
6. High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology [O] . Jorge Trasobares, François Vaurette, Marc François, 2014

机译：用于金纳米阵列制造和在纳米技术中使用的高速电子束光刻
7. IMPLEMENTATION OF E-BEAM PROXIMITY EFFECT CORRECTION USING LINEAR PROGRAMMING TECHNIQUES FOR THE FABRICATION OF ASYMMETRIC BOW-TIE ANTENNAS [O] . Filiz Yesilkoy 2016

机译：利用线性规划技术实现不对称弓形天线的电子束接近效应校正
8. Ionenstrahllithographie: Entwicklung Eines 1:1 Proximity Projektionsverfahrens Auf der Basis von Channeling-Masken (Ion Beam Lithography: Development of a 1:1 Proximity Projection Method Based on Channeling Masks) [R] . Csepregi, L. 1986

机译：Ionenstrahllithographie：Entwicklung Eines 1：1 proximity projektionsverfahrens auf der Basis von Channeling-masken（离子束光刻：开发基于通道掩模的1：1接近投影方法）

Rule-based approach to e-beam and process-induced proximity effect correction for phase-shifting mask fabrication

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