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首页> 外文会议>Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV >Reactive-ion etching of tungsten for high-resolution x-ray masks
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Reactive-ion etching of tungsten for high-resolution x-ray masks

机译：钨的反应离子刻蚀，用于高分辨率X射线掩模

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Abstract: A process for etching fine features in tungsten (100 nm linewidth or less) to produce patterned absorbers has been developed. The pattern is first defined in a chrome etch mask on the tungsten absorber layer using e-beam lithography and s then transferred into the tungsten by reactive-ion-etching. H$-2$/ is mixed with SF$-6$/ to passivate the sidewalls of the tungsten features because SF$-6$/ alone causes severe undercutting of the features. Control of undercutting is the key challenge in reactive ion etching of tungsten. With an optimum mixture of 20% H$-2$/ and 80% SF$-6$/, plus substrate cooling to $MIN@25$DGR@C, undercutting can be controlled for 250 nm geometries. Increased undercutting has been observed at the endpoint of the etching process, the chromium etch stop layer. This is demonstrated through a computer model. The endpoint can be controlled through laser endpoint detection. For sub 250 nm geometries, additional sidewall passivation is accomplished with an intermittent etch process, thereby allowing the etching of high aspect ratio 100 nm features in 650 nm thick tungsten layers. !7
机译：摘要：已经开发出一种蚀刻钨细线（线宽为100 nm或更小）以生产图案化吸收体的工艺。首先使用电子束光刻在钨吸收层上的铬蚀刻掩膜中定义图案，然后通过反应离子蚀刻将其转移到钨中。 H $ -2 $ /与SF $ -6 $ /混合以钝化钨特征的侧壁，因为仅SF $ -6 $ /会严重腐蚀特征。底切的控制是钨的反应性离子蚀刻的关键挑战。利用20％H $ -2 $ /和80％SF $ -6 $ /的最佳混合物，再将基板冷却至MIN @ 25 $ DGR @ C，可以控制250 nm几何形状的底切。在蚀刻过程的终点，即铬蚀刻停止层，观察到底切增大。通过计算机模型可以证明这一点。可以通过激光端点检测来控制端点。对于低于250 nm的几何形状，可以通过间歇刻蚀工艺完成额外的侧壁钝化，从而可以在650 nm厚的钨层中刻蚀高深宽比为100 nm的特征。 ！7

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