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首页> 外文会议>Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV >Optimization of ESCAP photoresist for x-ray lithography
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Optimization of ESCAP photoresist for x-ray lithography

机译：用于X射线光刻的ESCAP光刻胶的优化

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Abstract: Acid catalyzed photoresists have been examined for exposure using the Helios compact synchrotron x-ray source at the IBM Advanced Lithography Facility. A fundamental challenge with these photoresists is the sensitivity to contamination from the environment. This study attempts to optimize a new type of Environmentally Stable Chemically Amplified Photoresist (ESCAP) developed by IBM Almaden Research Center. A key feature of this new resist is that it does not require an extra polymer topcoat to seal out airborne contaminants. The establishment of a base process and then the enhancement of exposure latitude was the main objective of the optimization. A 5 factor Taguchi optimization was designed to test the effects of post exposure bake (PEB) temperature, PEB time, post apply bake (PAB) temperature, PAB time and develop time. Sixteen wafers were utilized to explore 3 levels for each factor. Twenty-four additional wafers were run using the optimized process with slight variations. These were split into 3 runs for an estimate of noise. The second optimization used 4 factors with 3 interactions. The 200, 300, and 500 nm isolated line structures were examined. A test for maximum photospeed pointed to the same optimum region for latitude as well as sensitivity. Across all conditions a 5X change in dose for linewidth was shown while the exposure latitude for the 500 nm varied from 21 to 54%. The slopes fit to the subsequent plots ranged from 2 - 6 nm/mJ. The PEB latitude was seen to be 10 - 14 nm/$DGR@C. !5
机译：摘要：已经在IBM Advanced Lithography Facility使用Helios紧凑型同步加速器X射线源检查了酸催化光刻胶的曝光情况。这些光致抗蚀剂的基本挑战是对环境污染的敏感性。这项研究试图优化由IBM Almaden研究中心开发的新型环境稳定型化学增幅光刻胶（ESCAP）。这种新型抗蚀剂的关键特征在于，它不需要额外的聚合物面漆即可密封空气中的污染物。建立基本过程，然后提高曝光范围是优化的主要目标。设计了五因素Taguchi优化程序，以测试曝光后烘烤（PEB）温度，PEB时间，施加后烘烤（PAB）温度，PAB时间和显影时间的影响。利用16个晶圆探索每个因素的3个水平。使用优化的工艺运行了24个额外的晶圆，但略有不同。将它们分为3个运行，以估算噪声。第二次优化使用4个因子和3个相互作用。检查了200、300和500 nm的隔离线结构。对最大光速的测试指出，纬度和灵敏度都处于相同的最佳区域。在所有条件下，线宽剂量均发生了5倍变化，而500 nm的曝光范围从21％更改为54％。斜率适合随后的图，范围为2-6 nm / mJ。可见PEB纬度为10-14 nm / $ DGR @ C。 ！5

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