Abstract: Ion projection lithography (IPL) is analogous to an optical wafer stepper except the exposing photons have been replaced by high energy, light ions. In the IPL machine being developed by the Advanced Lithography Group (ALG), a silicon stencil mask is `illuminated' by a broad area beam of hydrogen or helium ions. The ions pass through stencil mask openings and enter a multi- electrode electrostatic lens system which projects a demagnified image of the stencil mask onto a resist coated wafer substrate. Demonstrated IPL performance is covered. Independent calculations of the novel ion-optical column of the ALG prototype tool show less than 15 nm distortion over a 20 mm $MUL 20 mm field, and indicate that even larger fields are possible. This machine will utilize standard optical, off-axis, wafer alignment and a precision laser interferometer controlled X-Y-stage. This combined `pattern lock' will enable the ALG prototype to achieve overlay requirements necessary for 0.15 $mu@m geometries. The Advanced Lithography Group project for constructing the prototype ion projector is discussed. !17
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机译：摘要：离子投射光刻（IPL）类似于光学晶圆步进机，不同之处在于曝光的光子已被高能轻离子取代。在由高级光刻集团（ALG）开发的IPL机器中，硅蜡模板被宽广的氢或氦离子束“照亮”。离子穿过模板掩膜开口并进入多电极静电透镜系统，该系统将模板掩膜的缩小图像投射到涂有抗蚀剂的晶片基板上。涵盖了演示的IPL性能。对ALG原型工具的新型离子光学镜筒的独立计算显示，在20 mm $ MUL 20 mm视场中，畸变小于15 nm，这表明更大的视场也是可能的。该机器将利用标准光学，离轴，晶片对准和精密激光干涉仪控制的X-Y平台。这种组合的“模式锁定”将使ALG原型能够达到0.15μm几何尺寸所需的覆盖要求。讨论了用于构建原型离子投影仪的Advanced Lithography Group项目。 ！17
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