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Improved proximity correction algorithm for electron-beam lithography

机译:改进的电子束光刻接近校正算法

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摘要

Abstract: An improved proximity effect correction method based on pattern division, which attempts to correct both for inter- and for intra-shape proximity effects, is proposed. The experimental results suggest that the algorithm has good convergence, fast data processing speed, and good correction effects. Compared with the method based on transform, our approach has apparent better correction effects. !20
机译:摘要:提出了一种改进的基于模式划分的校正方法,该方法试图校正形状间和形状内的邻近效应。实验结果表明,该算法收敛性好,数据处理速度快,校正效果好。与基于变换的方法相比,我们的方法具有明显更好的校正效果。 !20

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