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Synchrotron irradiation stability of x-ray masks utilizing stress-free W-Ti absorbers and SiC membranes

机译:使用无应力W-Ti吸收剂和SiC膜的X射线掩模的同步辐射稳定性

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Abstract: The radiation damage of the component materials of x-ray masks such as W-Ti absorbers, SiC membranes, and indium tin oxide (ITO) films as anti-reflection coating materials was investigated mechanically and optically. The stress change of the stress-free W-Ti absorber after an SR irradiation dose of 670 MJ/cm$+3$/ was less than 1 MPa. The radiation stability of the absorber was confirmed even after stress-free annealing treatment. Exposure of the SiC membranes was conducted for the entire area of the window under the conditions similar to those for pattern exposure. The SR-induced distortion of the SiC membrane was less than 20 nm with a dose of 130 MJ/cm$+3$/ and the decrease of the transmission after the SR irradiation was less than 1% over the entire visible region. The dependence of the membrane stress on the radiation damage was not observed. As for the ITO films, it was observed that the stress changed to the compressive side with the increase in the SR irradiation dose independent of the initial stress condition and deposition techniques. In this experiment, the spin-coated ITO showed the best stability against SR irradiation in comparison with the sputtering and electron beam (EB) evaporation techniques. The refractive index of the ITO film did not show a marked change before and after SR irradiation. !8
机译:摘要:对W-Ti吸收体,SiC膜和氧化铟锡(ITO)膜等X射线掩模的组成材料的抗辐射涂层进行了机械和光学研究。 SR辐照剂量为670 MJ / cm $ + 3 $ /后,无应力W-Ti吸收剂的应力变化小于1 MPa。即使在无应力退火处理之后,也确认了吸收体的辐射稳定性。在与图案曝光相似的条件下,对窗口的整个区域进行SiC膜的曝光。剂量为130 MJ / cm $ + 3 $ /的SR引起SiC膜的SR形变小于20 nm,并且在SR照射后整个可见光区域的透射率降低小于1%。没有观察到膜应力对辐射损伤的依赖性。对于ITO膜,观察到应力随SR辐射剂量的增加而向压缩侧变化,而与初始应力条件和沉积技术无关。在该实验中,与溅射和电子束(EB)蒸发技术相比,旋涂ITO对SR辐射显示出最佳的稳定性。 ITO膜的折射率在SR辐射之前和之后没有显示出明显的变化。 !8

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