Investigation into the thermoelectric properties of GaSb/lnAs superlattice structures

机译：GaSb / InAs超晶格结构的热电性能研究

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report on our investigation into the use of I1I-V superlattice structures for thermoelectric (TE) applications. Preliminary review of I1I-V materials trends indicate that the GaSb/lnAs superlattice system should offer one of the best potentials for high thermoelectric performance in the 500K-800K range. MOCVD growth of GaSb/lnAs superlattice structures was carried out, and relevant structural, thermal, and electrical characterization has been performed. TEM and XRD results demonstrate a well-ordered superlattice structure. Thermal conductivity measurements reveal a reduction in the room-temperature thermal conductivity of GaSb/lnAs superlattices (4.4-10.0 W/m-K), relative to either binary GaSb (32 W/m-K) or InAs (27 W/m-K). Additionally, we have worked to optimize the thermoelectric power factor (aV), studying both Se- and Te-doping of the superlattice structures, in an effort to demonstrate optimal thermoelectric performance. Our results demonstrate a maximum ZT of 0.36 at 400K for optimally doped n-type GaSb/lnAs superlattice structures.

机译：我们报告我们对I1I-V超晶格结构在热电（TE）应用中的使用情况的调查。对I1I-V材料趋势的初步审查表明，GaSb / lnAs超晶格系统应提供500K-800K范围内高热电性能的最佳潜力之一。进行了GaSb / lnAs超晶格结构的MOCVD生长，并进行了相关的结构，热学和电学表征。 TEM和XRD结果表明，有序的超晶格结构。热导率测量表明，相对于二元GaSb（32 W / m-K）或InAs（27 W / m-K），GaSb / InAs超晶格的室温热导率降低（4.4-10.0 W / m-K）。此外，我们还研究了超晶格结构的Se和Te掺杂，以优化热电功率因数（aV），以证明最佳的热电性能。我们的结果表明，最佳掺杂的n型GaSb / lnAs超晶格结构在400K时的最大ZT为0.36。

著录项

来源
《Energy harvesting-recent advances in materials, devices and applications》|2011年|p.35-40|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
Philip T. Barletta; Gary E. Bulman; Geza Dezsi; Thomas S. Colpitts; Rama Venkatasubramanian;
展开▼
作者单位

Center for Solid-State Energetics, RTI International, Research Triangle Park, 27706, U.S.A.;

Center for Solid-State Energetics, RTI International, Research Triangle Park, 27706, U.S.A.;

Center for Solid-State Energetics, RTI International, Research Triangle Park, 27706, U.S.A.;

Center for Solid-State Energetics, RTI International, Research Triangle Park, 27706, U.S.A.;

Center for Solid-State Energetics, RTI International, Research Triangle Park, 27706, U.S.A.;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类能源;工程材料一般性问题;
关键词

相似文献

外文文献
中文文献
专利

1. Quantitative mobility spectrum analysis of carriers in GaSb/lnAs/GaSb superlattice [J] . T. V. Chandrasekhar Rao, J. Antoszewski, J. B. Rodriguez, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2008,第3期

机译：GaSb / InAs / GaSb超晶格中载流子的定量迁移谱分析
2. Characterization of carriers in GaSb/lnAs superlattice grown on conductive GaSb substrate [J] . T. V. Chandrasekhar Rao, J. Antoszewski, L. Faraone, Applied Physics Letters . 2008,第1期

机译：导电GaSb衬底上生长的GaSb / lnAs超晶格中载流子的表征
3. Quantum Transport and Thermoelectric Propertiesof InAs/GaSb Superlattices [J] . J.-F.Lin, D. Z.-Y.Ting VLSI Design . 1998,第1a4期

机译：InAs / GaSb超晶格的量子输运和热电性质
4. Investigation into the thermoelectric properties of GaSb/lnAs superlattice structures [C] . Philip T. Barletta, Gary E. Bulman, Geza Dezsi, Symposium on energy harvesting-recent advances in materials, devices and applications . 2012

机译：对气体/ LNAS超晶格结构的热电性能的研究
5. Microstructure and thermoelectric properties of ScN thin films and metal/ScN superlattices for high-temperature energy conversion [D] . Burmistrova, Polina V. 2012

机译：用于高温能量转换的ScN薄膜和金属/ ScN超晶格的微观结构和热电性能
6. Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy [O] . D. Benyahia, Ł. Kubiszyn, K. Michalczewski, 2018

机译：GaAs衬底上分子束外延生长的中波和长波InAs / GaSb超晶格的电学性质
7. Scanning tunneling microscopy of lnAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry [O] . Feenstra R. M., Collins D. A., Ting D. Z.-Y., 1994

机译：lnAs / GaSb超晶格的扫描隧道显微镜：子带，界面粗糙度和界面不对称
8. Experimental evidence of improved thermoelectric properties at 300K in Si/ Ge superlattice structures [R] . Venkatasubramanian, R. , Colpitts, T. , Watko, E. , 1997

机译：在si / Ge超晶格结构中300K时改善热电性能的实验证据

Investigation into the thermoelectric properties of GaSb/lnAs superlattice structures

摘要

著录项

相似文献

相关主题

期刊订阅