• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >LOW ENERGY PROTON INDUCED DAMAGE IN BIFACIAL n~+-p-p~+ Si SOLAR CELLS
【24h】

LOW ENERGY PROTON INDUCED DAMAGE IN BIFACIAL n~+-p-p~+ Si SOLAR CELLS

机译：低能质子诱发的双子n〜+ -p-p〜+ Si太阳能电池损伤

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The use of bifacial Si solar cells as a power supply for space vehicles determines the need for data on their degradation due to low energy protons. Due to the high sensitivity of bifacial Si solar cells under back illumination to radiation damage they are also an excellent tool for a laboratory study of the introduction of radiation defects by low energy protons. Experiments were undertaken using bifacial solar cells with n~+-p-p~+ structure fabricated on ～200 μm wafers of 10 Ω.cm Cz Si. Protons of 300-800 keV were used for back irradiation. Degradation of PV parameters was measured under front and back illumination. Minority carrier diffusion lengths, L, in damaged base layers and corresponding damage coefficients K(E) were determined. Cluster defects are suggested as the dominating recombination centers in low energy proton irradiated p-Si.
机译：使用双面硅太阳能电池作为航天器的电源，决定了由于低能质子而需要有关其退化的数据的需求。由于双面Si太阳能电池在背照下对辐射损伤具有很高的敏感性，因此它们也是用于实验室研究低能质子引入辐射缺陷的出色工具。实验是在10Ω.cmCz Si的〜200μm晶片上制造的n〜+ -p-p〜+结构的双面太阳能电池进行的。 300-800 keV的质子用于背照射。在前和后照明下测量PV参数的降解。确定了受损基层中的少数载流子扩散长度L和相应的损害系数K（E）。团簇缺陷被认为是低能质子辐照的p-Si的主要复合中心。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号