• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Fifth International Symposium on Semiconductor Wafer Bonding, 5th, Oct 1999, Honolulu >OXIDATION AND INDUCED DAMAGES IN OXYGEN PLASMA IN-SITU WAFER BONDING
【24h】

OXIDATION AND INDUCED DAMAGES IN OXYGEN PLASMA IN-SITU WAFER BONDING

机译：氧气等离子体原位键合中的氧化和诱发的损伤

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper we present our in situ oxygen plasma bonding process. The bonding apparatus was designed with the intention to minimise the plasma-induced damages in one of the wafers in the bonded pair, intended as the active device layer. As a step in optimising the discharge parameters for wafer bonding applications, we have studied the influence of the self-bias voltage. An optimum in surface energy was found at moderate self-bias voltages, both at room temperature and after 200℃ annealing. This is explained by the fact that at these voltages there is a minimum oxide thickness, which promotes the diffusion of water from the bond-interface, and also by the fact that at these voltages we have the best surface cleaning conditions. With our in situ oxygen plasma activated wafer bonding process there was a major increase in surface energy for wafers bonded at moderate self-bias voltages compared to conventional wafer bonding performed in ambient air. The ellipsometric results showed that with our oxygen plasma bonding process small damages were found, especially on the wafer placed on the grounded electrode.
机译：在本文中，我们介绍了原位氧等离子体键合过程。设计键合设备的目的是最大程度地减少键合对中的一个晶片中的等离子诱导的损坏，该对晶片被用作有源器件层。作为优化晶片键合应用的放电参数的一个步骤，我们研究了自偏压的影响。在室温和200℃退火后，在适度的自偏压下，发现表面能最佳。这可以通过以下事实来解释：在这些电压下存在最小的氧化物厚度，该厚度可以促进水从键合界面扩散，并且可以通过以下事实来解释：在这些电压下，我们具有最佳的表面清洁条件。与在环境空气中进行的常规晶圆键合相比，通过我们的原位氧等离子体激活的晶圆键合工艺，以适度的自偏置电压键合的晶圆的表面能大大增加了。椭偏结果表明，利用我们的氧等离子体键合工艺，发现的损伤很小，特别是放在接地电极上的晶片上。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号