Polycrystalline Germanium and Silicon-Germanium Alloys on Plastic for Realization of Thin-Film Transistors

机译：塑料上的多晶锗和硅锗合金，用于实现薄膜晶体管

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Device-quality polycrystalline Ge layers have been grown on flexible poly-ethylene terephthalate (PET) substrates by means of stress-assisted Cu-induced crystallization at temperatures as low as 130℃ and employed for fabrication of depletion-mode poly-Ge thin-film transistors (TFTs). These TFTs show an ON/OFF ratio of 104 and an effective hole mobility of 110 cm~2/Vs. The stress-assisted crystallization technique has been extended to crystallize SiGe alloys at low temperatures for possible fabrication of poly-SiGe TFTs on plastic. As a result, poly-Ge seeded poly-crystalline SiGe layers with 40% Si content are grown at a low annealing temperature of 180℃ in the presence of 0.05% equivalent compressive strain.

机译：通过在低至130℃的温度下通过应力辅助Cu诱导的结晶，在柔性聚对苯二甲酸乙二酯（PET）衬底上生长了器件质量的多晶Ge层，并用于制造耗尽型多Ge薄膜晶体管（TFT）。这些TFT的开/关比为104，有效空穴迁移率为110 cm〜2 / Vs。应力辅助结晶技术已经扩展到可以在低温下结晶SiGe合金，从而可以在塑料上制造聚SiGe TFT。结果，在0.05％当量压缩应变的情况下，在180℃的低退火温度下生长了具有40％Si含量的多Ge籽晶多晶SiGe层。

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来源
《Flexible Electronics 2004 -Materials and Device Technology》|2004年|P.101-105|共5页
会议地点 San FranciscoCA(US)
作者
B. Hekmatshoar; D. Shahrjerdi; S. Mohajerzadeh; A. Khakifirooz; M. Robertson; E. Asl Soliemani;
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Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran;

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正文语种 eng
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专利

1. Polycrystalline silicon-germanium thin-film transistors [J] . Tsu-Jae King, Saraswat K.C. IEEE Transactions on Electron Devices . 1994,第9期

机译：多晶硅锗薄膜晶体管
2. Double-gate polycrystalline-germanium thin-film transistors using copper-induced crystallization on flexible plastic substrate [J] . Utsumi Hiroki, Nishiguchi Naoki, Miyazaki Ryo, Japanese journal of applied physics . 2019,第4期

机译：在柔性塑料基板上使用铜诱导结晶的双栅极多晶锗薄膜晶体管
3. Thin-film tunneling transistors on flexible plastic substrates based on stress-assisted lateral growth of polycrystalline germanium [J] . Bahman Hekmatshoar, Shams Mohajerzadeh, Davood Shahrjerdi, Applied Physics Letters . 2004,第6期

机译：基于多晶锗的应力辅助横向生长的柔性塑料基板上的薄膜隧道晶体管
4. Polycrystalline Germanium and Silicon-Germanium Alloys on Plastic for Realization of Thin-Film Transistors [C] . B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, Symposium on Flexible Electronics Materials and Device Technology . 2004

机译：塑料晶锗和硅锗合金，实现薄膜晶体管
5. A low thermal budget polycrystalline silicon-germanium/silicon thin film transistor technology [D] . Wang, Albert William 1998

机译：低热预算多晶硅-锗/硅薄膜晶体管技术
6. Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy [O] . Michael Zürch, Hung-Tzu Chang, Peter M. Kraus, 2017

机译：极紫外瞬态吸收光谱法探测硅锗合金中超快的载热和俘获
7. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells [O] . Yen-Tang Huang, Hung-Jung Hsu, Shin-Wei Liang, 2014

机译：氢化微晶硅 - 锗合金改善Si基薄膜太阳能电池长波长吸收的研制

Polycrystalline Germanium and Silicon-Germanium Alloys on Plastic for Realization of Thin-Film Transistors

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