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首页> 外文会议>Gallium nitride materials and devices X >Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
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Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

机译：直接比较采用无金技术在200mm硅基GaN上处理的基于GaN的e-模式架构（嵌入式MISHEMT和p-GaN HEMT）

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摘要

Gallium nitride transistors are going to dominate the power semiconductor market in the coming years. The natural form of GaN-based devices is "normally-on" or depletion mode (d-mode). Despite these type of devices can be used in power semiconductor systems by means of special drivers or in a cascode package solution, yet the market demands for normally-off or enhancement mode (e-mode) devices. In this work, we directly compare and analyze the two most common approaches to obtain GaN-based e-mode devices: recessed gate MISHEMTs and p-GaN HEMTs. Both approaches have their pro's and con's as well as their critical process steps..
机译：未来几年，氮化镓晶体管将主导功率半导体市场。 GaN基器件的自然形式是“常开”或耗尽模式（d模式）。尽管可以通过特殊驱动器或共源共栅封装解决方案将这些类型的设备用于功率半导体系统，但市场仍需要常关或增强模式（e-mode）设备。在这项工作中，我们直接比较和分析两种最常见的获得基于GaN的e-mode器件的方法：凹栅MISHEMT和p-GaN HEMT。两种方法都有其优点和缺点以及关键的过程步骤。

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