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首页> 外文会议>Gallium nitride materials and devices X >Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure
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Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure

机译：扩散注入多量子阱发光二极管结构中的垂直激发轮廓

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摘要

Due to their potential to improve the performance of light-emitting diodes (LEDs), novel device structures based on nanowires, surface plasmons, and large-area high-power devices have received increasing amount of interest. These structures are almost exclusively based on the double hetero junction (DHJ) structure, that has remained essentially unchanged for decades. In this work we study a Ⅲ-nitride diffusion injected light-emitting diode (DILED), in which the active region is located outside the pn-junction and the excitation of the active region is based on bipolar diffusion of charge carriers. This unorthodox approach removes the need of placing the active region in the conventional current path and thus enabling carrier injection in device structures, which would be challenging to realize with the conventional DHJ design. The structure studied in this work is has 3 indium gallium nitride / gallium nitride (InGaN/GaN) quantum wells (QWs) under a GaN pn-junction. The QWs are grown at different growth temperatures for obtaining distinctive luminescence peaks. This allows to obtain knowledge on the carrier diffusion in the structure. When the device is biased, all QWs emit light indicating a significant diffusion current into the QW stack.
机译：由于其具有改善发光二极管（LED）性能的潜力，基于纳米线，表面等离子体激元和大面积高功率器件的新型器件结构引起了越来越多的关注。这些结构几乎完全基于双异质结（DHJ）结构，该结构几十年来一直保持不变。在这项工作中，我们研究了一种Ⅲ型氮化物扩散注入发光二极管（DILED），其中有源区位于pn结的外部，并且有源区的激发基于电荷载流子的双极扩散。这种非传统的方法消除了将有源区放置在常规电流路径中的需要，因此无需在器件结构中注入载流子，而用常规DHJ设计来实现这一点将具有挑战性。在这项工作中研究的结构是在GaN pn结下具有3个氮化铟镓/氮化镓（InGaN / GaN）量子阱（QW）。 QW在不同的生长温度下生长以获得独特的发光峰。这允许获得关于结构中载流子扩散的知识。当器件偏置时，所有QW都会发光，表明有大量扩散电流进入QW堆叠。

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  • 来源
    《Gallium nitride materials and devices X》|2015年|93632A.1-93632A.6|共6页
  • 会议地点 San Francisco CA(US)
  • 作者

    L. Riuttanen; P. Kivisaari; O. Svensk; T. Vasara; P. Myllys; J. Oksanen; S. Suihkonen;

  • 作者单位

    Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500 FI-00076 Aalto, Espoo, Finland;

    Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto, Espoo, Finland;

    Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500 FI-00076 Aalto, Espoo, Finland;

    Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500 FI-00076 Aalto, Espoo, Finland;

    Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500 FI-00076 Aalto, Espoo, Finland;

    Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto, Espoo, Finland;

    Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500 FI-00076 Aalto, Espoo, Finland;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ⅲ-nitrides; diffusion injection; light-emitting diodes;

    机译：Ⅲ-氮化物；扩散注入发光二极管;

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