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Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays

机译：日盲AlGaN 256x256 p-i-n探测器和焦平面阵列

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摘要

This paper reports the development of aluminum-gallium nitride (AlGaN or Al_xGa_(1-x)N) photodiode technology for high-operability 256x256 hybrid Focal Plane Arrays (FPAs) for solar-blind ultraviolet (UV) detection in the 260-280 μm spectral region. These hybrid UV FPAs consist of a 256x256 back-illuminated AlGaN p-i-n photodiode array, operating at zero bias voltage, bump-mounted to a matching 256x256 silicon CMOS readout integrated circuit (ROIC) chip. The unit cell size is 30x30 μm~2. The photodiode arrays were fabricated from multilayer AlGaN films grown by MOCVD on 2" dia. UV-transparent sapphire substrates. Improvements in AlGaN material growth and device design enabled high quantum efficiency and extremely low leakage current to be achieved in high-operability 256x256 p-i-n photodiode arrays with cuton and cutoff wavelengths of 260 and 280 nm, placing the response in the solar-blind wavelength region (less than about 280 nm) where solar radiation is heavily absorbed by the ozone layer. External quantum efficiencies (at V=0, 270 nm, no antireflection coating) as high as 58% were measured in back-illuminated devices. A number of 256x256 FPAs, with the AlGaN arrays fabricated from films grown at three different facilities, achieved response operabilities as high as 99.8%, response nonuniformities (σ/μ) as low as 2.5%, and zero-bias resistance median values as high as 1 x 10~(16) ohm, corresponding to R_0A products of 7x10~(10) ohm-cm~2. Noise Equivalent Irradiance (NEI) data were measured on these FPAs. Median NEI values at 1 Hz are 250-500 photons/pixel-s, with best-element values as low as 90 photons/pixel-s at 1 Hz.
机译：本文报告了用于260-280μm太阳盲紫外（UV）检测的高可操作性256x256混合焦平面阵列（FPA）的氮化铝镓（AlGaN或Al_xGa_（1-x）N）光电二​​极管技术的发展光谱区域。这些混合UV FPA由256x256背照式AlGaN p-i-n光电二极管阵列组成，该阵列以零偏置电压工作，凸点安装到匹配的256x256硅CMOS读出集成电路（ROIC）芯片上。晶胞尺寸为30x30μm〜2。光电二极管阵列由通过MOCVD在2英寸直径的紫外线透明蓝宝石衬底上生长的多层AlGaN膜制成。AlGaN材料生长和器件设计的改进使得能够在高可操作性256x256引脚光电二极管中实现高量子效率和极低的泄漏电流截止和截止波长分别为260和280 nm的阵列，将响应置于太阳辐射波长区域（小于约280 nm），在该区域中太阳辐射被臭氧层大量吸收外部量子效率（在V = 0、270时）在背照式设备中测得的纳米级（无防反射涂层）高达58％。许多256x256 FPA，由在三种不同设备上生长的薄膜制成的AlGaN阵列，实现了高达99.8％的响应可操作性，响应不均匀（ σ/μ）低至2.5％，零偏置电阻中值高达1 x 10〜（16）ohm，对应于R_0A乘积为7x10〜（10）ohm-cm〜2。 （NEI）数据是根据这些FPA进行测量的。 1 Hz时的中值NEI值为250-500光子/像素-秒，最佳元素值在1 Hz时低至90光子/像素-秒。

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