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首页> 外文会议>Gettering and defect engineering in semiconductor technology XVI >Electrically Inactive Dopants in Heavily Doped as-Grown Czochralski Silicon
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Electrically Inactive Dopants in Heavily Doped as-Grown Czochralski Silicon

机译：重掺杂生长的直拉硅中的非电活性掺杂剂

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摘要

To determine the electrically inactive fraction of As or P in heavily doped as-grown Czochralski Si 4-point resistivity and SIMS measurements were carried out. No clear trend for the electrical inactive fraction was found with an increasing dopant concentration, though a mean electrical inactive fraction of 11.5% for As doping could be determined. Experimental results on a dopant-vacancy complex in as-grown Si are scarce, hence temperature- dependent positron annihilation lifetime spectroscopy (PALS) was carried out on several heavily As and P doped as-grown Si samples. The measured average positron annihilation lifetime τ_(av) is between 218 ps and 220 ps. No temperature dependent effect on τ_(av) could be observed. Therefore, it can be concluded that in the studied doping range the dopant-vacancy complexes do not exist. The reason for the inactivation of the dopant has to be found elsewhere. A possible explanation can be the formation of dopant precipitates.
机译：为了确定重掺杂的原形切克劳斯基Si中的As或P的电惰性部分，进行了4点电阻率和SIMS测量。尽管可以确定砷掺杂的平均无电分数为11.5％，但随着掺杂剂浓度的增加，没有发现无电分数的明显趋势。在生长的硅中的掺杂剂-空位配合物的实验结果很少，因此，对几个重掺杂的As和P掺杂的Si样品进行了温度依赖性正电子an没寿命谱（PALS）。测得的平均正电子an灭寿命τ_（av）在218 ps至220 ps之间。没有观察到温度对τ_（av）的影响。因此，可以得出结论，在所研究的掺杂范围内，不存在掺杂剂-空位配合物。掺杂剂失活的原因必须在其他地方找到。可能的解释是掺杂剂沉淀的形成。

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