Defect Formation in Ion-Implanted Si - Approach to Controlled Semiconductor Optical Properties

著录项

• 来源
  《Gettering and defect engineering in semiconductor technology XVI》|2015年|374-379|共6页
• 会议地点 Bad Staffelstein(DE)
• 作者

  Nina Khuchua; Marina Tigishvili; Revaz Melkadze; Nugzar Dolidze; Nodar Gapishvili; Zurab Jibuti; Galina Dovbeshko; Vladimir Romanyuk;

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• 作者单位

  RPC "Electron Technology" of Iv.Javakhishvili Tbilisi State University, 13, Chavchavadze ave.,Tbilisi, 0179, Georgia;

  RPC "Electron Technology" of Iv.Javakhishvili Tbilisi State University, 13, Chavchavadze ave.,Tbilisi, 0179, Georgia;

  RPC "Electron Technology" of Iv.Javakhishvili Tbilisi State University, 13, Chavchavadze ave.,Tbilisi, 0179, Georgia;

  Institute of Micro- and Nanoelectronics, 13, Chavchavadze ave., Tbilisi, 0179, Georgia;

  Institute of Micro- and Nanoelectronics, 13, Chavchavadze ave., Tbilisi, 0179, Georgia;

  Institute of Micro- and Nanoelectronics, 13, Chavchavadze ave., Tbilisi, 0179, Georgia;

  Institute of Physics, NASU, 46, Nauky av., Kiev, 03690, Ukraine;

  V.Lashkaryov Institute of Semiconductor Physics NASU, 41, Nauky av., Kiev, 03028, Ukraine;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Boron ion implanted silicon; p-n structures; IR reflection spectra; Raman-spectroscopy; IR and UV photosensitivity; extended defects;

  机译：硼离子注入硅； p-n结构；红外反射光谱；拉曼光谱红外和紫外光敏性；扩展缺陷;