Investigations of critical structural defects in active layers of GaN-on-Si for power electronic devices

机译：功率电子器件硅基GaN有源层中关键结构缺陷的研究

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The influence of structural defects in the active layer of GaN-on-Si substrates on the vertical leakage current was studied. The structural defects were analyzed by analytical scanning electron microscopy by means of cathodoluminescence (CL). The leakage current was determined by vertical I-V measurements. Two possibilities were found, which give potential explanations for the variations of the vertical leakage current: i) Threading dislocations, which may partially form leakage paths, were detected by CL imaging, ii) Variations of the carbon doping, which is used to tune GaN to a semi insulating material were revealed by CL spectroscopy.

机译：研究了GaN-on-Si衬底有源层中的结构缺陷对垂直漏电流的影响。通过分析扫描电子显微镜借助阴极发光（CL）分析结构缺陷。漏电流通过垂直I-V测量确定。发现了两种可能性，这为垂直泄漏电流的变化提供了可能的解释：i）通过CL成像检测到可能部分形成泄漏路径的螺纹位错； ii）用于调整GaN的碳掺杂变化。通过CL光谱法揭示了半绝缘材料的热稳定性。

著录项

来源
《Gettering and defect engineering in semiconductor technology XVI》|2015年|417-420|共4页
会议地点 Bad Staffelstein(DE)
作者
Michael Knetzger; Elke Meissner; Joff Derluyn; Marianne Germain; Jochen Friedrich;
展开▼
作者单位

Fraunhofer IISB, Schottkystraße 10, 91058 Erlangen, Germany;

Fraunhofer IISB, Schottkystraße 10, 91058 Erlangen, Germany;

EpiGaN, Kempische Steenweg 293, 3500 Hasselt, Belgium;

EpiGaN, Kempische Steenweg 293, 3500 Hasselt, Belgium;

Fraunhofer IISB, Schottkystraße 10, 91058 Erlangen, Germany;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
GaN on Si; cathodoluminescence; carbon doping; dislocations; electrical properties,structural properties;

机译：氮化硅阴极发光碳掺杂脱臼;电性能，结构性能;

相似文献

外文文献
中文文献
专利

1. Investigations of critical structural defects in active layers of GaN-on-Si for power electronic devices [J] . Michael Knetzger, Elke Meissner, Joff Derluyn, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

机译：功率电子器件硅基GaN有源层中关键结构缺陷的研究
2. Investigation of Active Power Cycling Combined With Passive Thermal Cycles on Discrete Power Electronic Devices [J] . Otto Alexander, Rzepka Sven, Wunderle Bernhard Journal of Electronic Packaging . 2019,第3期

机译：离散功率电子器件上的有功功率循环与无源热循环相结合的研究
3. Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications [J] . Pirri CF, Porro S, Ferrero S, Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2005,第10a11期

机译：电力电子设备应用中碳化硅外延层的生长，形态和结构表征
4. Investigations of critical structural defects in active layers of GaN-on-Si for power electronic devices [C] . Michael Knetzger, Elke Meissner, Joff Derluyn, International Conference on Gettering and Defect Engineering in Semiconductor Technology . 2016

机译：电力电子器件甘型电力型危重结构缺陷的研究
5. Interface Engineering and Bulk Trap Investigations in GaN-on-Si Lateral Heterojunction Power Devices [D] . Yang, Shu. 2014

机译：Gan-on-Si横向异性结电源装置的界面工程和散装陷阱调查
6. Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review [O] . Xiaorui Guo, Qian Xun, Zuxin Li, 2019

机译：高温功率电子器件用碳化硅转换器和MEMS器件的评论
7. Powered Electronic Augmentations in Hearing Protection Technology Circa 2010 including Active Noise Reduction, Electronically-Modulated Sound Transmission, and Tactical Communications Devices: Review of Design, Testing, and Research [O] . John G. Casali 2010

机译：电源电子增强在听力保护技术大约2010年，包括有源降噪，电子调制的声音传输和战术通信设备：设计，测试和研究审查

Investigations of critical structural defects in active layers of GaN-on-Si for power electronic devices

摘要

著录项

相似文献

相关主题

期刊订阅