There is a great potential in cost reduction for optoelectronics and power electronics by epitaxially integratingⅢ-Nitride semiconductors on large diameter silicon.This paper presents the R&D of GaN-on-Silicon for blue/UV LED,laser diode,and high electron mobility transistors(HEMTs).The epitaxial integration of GaN on silicon was hindered by two major technical challenges.The large lattice mismatch between GaN and Si(～17％)often causes a high density of dislocation defects,and the huge misfit in the coefficient of thermal expansion(～54％)results in crack network formation in the GaN epitaxial film.
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