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Characteristics of GaN-based LED fabricated on a GaN-on-silicon platform

机译：硅基GaN平台上制造的GaN基LED的特性

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摘要

In this paper, we describe the fabrication and characterization of a GaN-based light-emitting diode (LED) on a GaN-on-silicon platform. A freestanding membrane structure eliminates the absorption of the emitted light by a silicon substrate and reduces the number of confined optical modes, leading to higher photoluminescence intensity. Compared with an LED with a silicon substrate, the current-voltage characteristics of a freestanding membrane LED demonstrate a lower turn-on voltage and a steeper current-voltage profile. Both anomalous positive capacitance peak and negative capacitance are observed in the capacitance-voltage measurements, which correspond well to the current-voltage characteristics. The measured electroluminescence intensity is significantly increased for a freestanding membrane LED. These experimental results show that our proposed substrate removal technology is promising for the fabrication of a high-performance membrane LED for diverse applications.
机译：在本文中，我们描述了在GaN硅基平台上的GaN基发光二极管（LED）的制造和表征。独立的膜结构消除了硅基板对发射光的吸收，并减少了受限光学模式的数量，从而导致了更高的光致发光强度。与具有硅基板的LED相比，独立式薄膜LED的电流-电压特性显示出较低的开启电压和较陡的电流-电压曲线。在电容-电压测量中观察到异常的正电容峰值和负电容，这与电流-电压特性非常吻合。对于独立式薄膜LED，测得的电致发光强度显着提高。这些实验结果表明，我们提出的衬底去除技术有望用于各种应用的高性能薄膜LED的制造。

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  • 来源
    《_Applied Physics Express》 |2014年第8期|082102.1-082102.4|共4页
  • 作者

    Zheng Shi; Xin Li; Gangyi Zhu; Zhenhai Wang; Peter Gruenberg; Hongbo Zhu; Yongjin Wang;

  • 作者单位

    Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

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