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Growth of CdZnTe single crystals for radiation detectors

机译:辐射探测器用CdZnTe单晶的生长

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A new growth technique of CdZnTe single crystals for room-temperature radiation detectors is developed. It is based on a free growth from the vapour phase on a oriented single crystal seed. binary polycrystalline CdTe and ZnTe compounds are placed and heated separately to produce divided flows which were introduced into the crystal growth zone where they mixed before deposition on the seed. Monocrystalline and homogeneous materials with hihg electrical resistivity, low defect density, and crystal volume up to approx 50 cm~3 are prepared by this techniqeu. direct c 1999 Elsevier Science B.V. All rights reserved.
机译:开发了一种用于室温辐射探测器的CdZnTe单晶生长新技术。它基于气相在定向单晶种上的自由生长。将二元多晶CdTe和ZnTe化合物分别放置和加热,以产生分流,将其引入晶体生长区,在此处混合,然后沉积在种子上。用这种技术制备了电阻率高,缺陷密度低,晶体体积高达约50 cm〜3的单晶和均质材料。直接c 1999 Elsevier Science B.V.保留所有权利。

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