GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al_2O_3 AS GATE DIELECTRIC AND SURFACE PASSIVATION

机译：原子层沉积Al_2O_3作为栅介电和表面钝化的GaN MOS-HEMT

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We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic layer deposition (ALD) Al_2O_3 film as a gate dielectric and for surface passivation simultaneously. Compared to the conventional AlGaN/GaN HEMT of the same design, six order of magnitude smaller gate leakage current and tripled drain current at forward gate bias demonstrate the effectiveness of ALD Al_2O_3 as a gate dielectric. The high transconductance and high effective two-dimensional electron mobility verify the high-quality of Al_2O_3/AlGaN interface with low interface trap density. The Al_2O_3 passivation effect is also studied by sheet resistance measurement and short pulse drain characterization.

机译：我们报道了使用原子层沉积（ALD）Al_2O_3膜作为栅极电介质并同时进行表面钝化的GaN金属氧化物半导体高电子迁移率晶体管（MOS-HEMT）。与相同设计的常规AlGaN / GaN HEMT相比，栅极漏电流和正向栅极偏压下的漏极电流小了六个数量级，证明ALD Al_2O_3作为栅极电介质的有效性。高跨导和高有效的二维电子迁移率证明了Al_2O_3 / AlGaN界面界面陷阱密度低的高质量。还通过薄层电阻测量和短脉冲漏极表征来研究Al_2O_3钝化效果。

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来源
《IEEE Lester Eastman Conference on High Performance Devices; 20040804-06; Rensselaer Polytechnic Institute》|2004年|P.167-172|共6页
会议地点 Rensselaer Polytechnic Institute
作者
P.D. Ye; B. Yang; K.K. Ng; J. Bude; G.D. Wilk; S. Halder; J.C.M. Hwang;
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Agere Systems, 555 Union Boulevard Allentown, PA 18109, U.S.A.;

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正文语种 eng
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1. GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al_2O_3 AS GATE DIELECTRIC AND SURFACE PASSIVATION [J] . P. D. Ye, B. Yang, K. K. Ng, International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2004,第3期

机译：原子层沉积Al_2O_3作为栅介电和表面钝化的GaN MOS-HEMT
2. AlGaN/GaN MOS-HEMT With Dielectric and Interfacial Passivation Layer Grown by Atomic Layer Deposition [J] . Yuanzheng Yue, Yue Hao, Jincheng Zhang, IEEE Electron Device Letters . 2008,第8期

机译：通过原子层沉积生长介电和界面钝化层的AlGaN / GaN MOS-HEMT
3. Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al_2O_3 gate dielectrics [J] . J. W. Roberts, P. R. Chalker, K. B. Lee, Applied Physics Letters . 2016,第7期

机译：通过原子层沉积Al_2O_3栅电介质的原位氟掺杂来控制E模式和D模式硅基GaN硅金属绝缘体半导体异质结构场效应晶体管中的阈值电压
4. GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al_2O_3 AS GATE DIELECTRIC AND SURFACE PASSIVATION [C] . P.D. Ye, B. Yang, K.K. Ng, IEEE Lester Eastman Conference on High Performance Devices . 2005

机译：GaN MOS-HEMT使用原子层沉积AL_2O_3作为栅极电介质和表面钝化
5. Reactions of high-k gate dielectrics: Studies in hafnium, zirconium, yttrium, and lanthanum-based dielectrics and in-situ infrared results for hafnium dioxide atomic layer deposition. [D] . Kelly, Michael Jason. 2005

机译：高k栅极电介质的反应：在ha，锆，钇和镧基电介质以及二氧化ha原子层沉积的原位红外结果方面的研究。
6. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors [O] . Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, 2016

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7. Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/ GaN MOS HEMTs: Impact of deposition conditions on interface state density [O] . Ťapajna Milan, Válik Lukáš, Gucmann Filip, 2017

机译：用于GaN / AlGaN / GaN MOS HEMT的低温原子层沉积生长的Al2O3栅极电介质：沉积条件对界面态密度的影响

GaN MOS-HEMT USING ATOMIC LAYER DEPOSITION Al_2O_3 AS GATE DIELECTRIC AND SURFACE PASSIVATION

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