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首页> 外文会议>IMAPS 2008 - 41st international symposium on microelectronics: bringing together the entire microelectronics supply chain >Temporary Wafer Bonding Materials with Adjustable Debonding Properties for Use in High-Temperature Processing
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Temporary Wafer Bonding Materials with Adjustable Debonding Properties for Use in High-Temperature Processing

机译：具有可调解键性能的临时晶圆键合材料，用于高温加工

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摘要

Three-dimensional (3-D) integration is a very promising technology with the potential to improve device performance, increase device functionality, reduce power consumption, and decrease device size. One of the challenges in 3-D integration is processing the thinned wafer at high temperatures and in chemically stringent environments while the thinned wafer is still supported on a carrier wafer with a temporary bonding material. A new kind of spin-on materials for temporary wafer bonding has been developed to satisfy the high-temperature requirements of backside processes such as deposition, etching, curing, and plating. In addition to their high-temperature stability, these materials enable debonding from the carrier wafer by a "slide-off mechanism to eliminate risk of wafer breakage. The most important feature of these materials is that their debonding properties can be tuned to satisfy broad process requirements. This paper discusses pertinent properties of these materials, such as high coating and bonding uniformity, short debonding time, and ease of removal with industry-accepted safe solvents, and the processes developed to achieve these properties.
机译：三维（3-D）集成是一项非常有前途的技术，具有改善设备性能，增加设备功能，降低功耗和减小设备尺寸的潜力。 3-D集成中的挑战之一是在高温和化学严格的环境中处理减薄的晶圆，而减薄的晶圆仍用临时粘合材料支撑在载体晶圆上。为了满足背面工艺的高温要求，如沉积，蚀刻，固化和电镀，已经开发出一种用于临时晶圆键合的新型旋涂材料。这些材料除了具有高温稳定性外，还可以通过“滑移机制”从载体晶圆上剥离，从而消除晶圆破裂的风险。这些材料的最重要特征是可以调整其剥离性能以满足广泛的工艺要求本文讨论了这些材料的相关特性，例如高涂层和粘合均匀性，短脱胶时间，易于被行业认可的安全溶剂去除，以及为达到这些特性而开发的工艺。

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