Silicon p-i-n Focal Plane Arrays at Raytheon

机译：雷神公司的硅p-i-n焦平面阵列

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Raytheon has been building silicon p-i-n (Si-PIN) detector arrays for the past twenty years for various remote sensing instruments such as MODIS, EO-1, and Landsat now on orbit. See Figure 1. The Si-PIN technology at Raytheon has matured in the past five years with the addition of a dedicated silicon wafer fab, improvements in hybrid technologies, and the enhanced digital functionality of RVS custom read out integrated circuits (ROICs). This paper will discuss the advantages that Raytheon Si-PIN arrays offer over conventional CCDs and monolithic CMOS imagers such as 100% optical fill factor, high QE (visible - near IR), high MTF, and radiation hardness.

机译：在过去的20年中，雷神公司一直在为各种MODIS，EO-1和Landsat等遥感仪器在轨制造硅p-i-n（Si-PIN）检测器阵列。参见图1。在过去的五年中，雷声公司的Si-PIN技术已经成熟，增加了专用的硅晶圆厂，混合技术的改进以及RVS定制读出集成电路（ROIC）的增强数字功能。本文将讨论Raytheon Si-PIN阵列相对于常规CCD和单片CMOS成像器所具有的优势，例如100％光学填充系数，高QE（可见-近红外），高MTF和辐射硬度。

著录项

来源
《Infrared spaceborne remote sensing and instrumentation XVI》|2008年|70820J.1-70820J.14|共14页
会议地点 San Diego CA(US)
作者
Sean Kilcoyne; Neil Malone; Micky Harris; John Vampola; Decosta Lindsay;
展开▼
作者单位

Raytheon Vision Systems 75 Coromar Drive, Goleta, CA 93117;

Raytheon Vision Systems 75 Coromar Drive, Goleta, CA 93117;

Raytheon Vision Systems 75 Coromar Drive, Goleta, CA 93117;

Raytheon Vision Systems 75 Coromar Drive, Goleta, CA 93117;

Raytheon Vision Systems 75 Coromar Drive, Goleta, CA 93117;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类 V443.5;
关键词

相似文献

外文文献
中文文献
专利

1. Characteristics of heteroepitaxial structures Al (x) Ga1-x N for p-i-n diode focal plane arrays [J] . Smirnov D. V., Boltar K. O., Sednev M. V., Journal of Communications Technology and Electronics . 2016,第3期

机译：p-i-n二极管焦平面阵列的异质外延结构Al（x）Ga1-x N的特性
2. A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array [J] . Dong-Su Kim, Forrest S.R. IEEE Photonics Technology Letters . 1996,第4期

机译：单片集成InGaAs-InP p-i-n / JFET焦平面阵列
3. Raytheon to build rad-hard infrared focal plane array space sensors [J] . John Keller Military & Aerospace Electronics . 2016,第12期

机译：雷神公司建造抗辐射红外焦平面阵列空间传感器
4. Silicon p-i-n Focal Plane Arrays at Raytheon [C] . Sean Kilcoyne, Neil Malone, Micky Harris, Conference on infrared spaceborne remote sensing and instrumentation . 2008

机译：雷神芯片P-I-N焦平面阵列
5. The fabrication, microstructural characterization, and internal photoresponse of platinum silicide/p-type silicon and iridium silicide/p-type silicon Schottky barrier photodetectors for infrared focal plane arrays [D] . Mercer, Douglas Edward 1990

机译：红外焦平面阵列用硅化铂/ p型硅和硅化铱/ p型硅肖特基势垒光电探测器的制造，微观结构表征和内部光响应
6. Customisable X-ray fluorescence photodetector with submicron sensitivity using a ring array of silicon p-i-n diodes [O] . Phil S. Yoon -1

机译：使用硅p-i-n二极管的环形阵列可定制的具有亚微米灵敏度的X射线荧光光电探测器
7. UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes [O] . J.D. Brown, J. Boney, J. Matthews, 2000

机译：基于GaN / AlGaN P-I-N光电二极管的128×128焦平面阵列的UV特异性（320-365 nm）数码相机
8. Staring 256 x 256 LWIR Focal Plane Array Performance of the Raytheon Exoatmospheric Kill Vehicle. [R] . Herring, J., Bollengier, L., Madajian, D., 1998

机译：凝视雷神大气层外杀伤车辆的256 x 256 LWIR焦平面阵列性能。

Silicon p-i-n Focal Plane Arrays at Raytheon

摘要

著录项

相似文献

相关主题

期刊订阅