Focused ion beam damage: its characterisation and minimisation

机译：聚焦离子束损伤：其表征和最小化

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The depths of the ion damaged layers formed in Si, GaAs, InP and Al during focused ion beam milling have been investigated. The layers have been examined directly in the TEM and the effect of different beam currents on the development of the layers has been examined. The use of different approaches which enable the formation of the damage either to be minimised or removed are described.

机译：研究了聚焦离子束铣削过程中在Si，GaAs，InP和Al中形成的离子损伤层的深度。已经在TEM中直接检查了层，并且已经检查了不同束电流对层的显影的影响。描述了使损坏的形成最小化或消除的不同方法的使用。

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来源
《Institute of Physics Electron Microscopy and Analysis Group Conference, Sep 5-7, 2001, Dundee》|2001年|p.377-380|共4页
会议地点 Dundee(GB);Dundee(GB)
作者
D Sutton; S M Parle; S B Newcomb;
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作者单位

Materials and Surface Science Institute, University of Limerick, Limerick, Ireland.;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Focused ion beam damage: its characterisation and minimisation

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