MBE of quantum wires and quantum dots

机译：量子线和量子点的MBE

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The fabrication of semiconductor quantum wire and quantum dot arrays with high uniformity and controlled positioning is an outstanding challenge in nanostructure materials science. We demonstrate a significant step forward by combining self-organized epitaxial growth with lithographic patterning and the assistance of atomic hydrogen on high-index GaAs substrates. This concept provides a strict control of chemical, structural and geometric perfection of these semiconductor nanostructures which is needed for realistic device applications.

机译：具有高均匀性和受控位置的半导体量子线和量子点阵列的制造是纳米结构材料科学中的突出挑战。我们通过结合自组织的外延生长和光刻图案以及高折射率GaAs衬底上的原子氢的辅助，证明了向前迈出的重要一步。这个概念提供了对这些半导体纳米结构的化学，结构和几何完美性的严格控制，这是现实的设备应用所必需的。

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来源
《International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China》|2000年|p.8-12|共5页
会议地点 Beijing(CN)
作者
Richard Noeted; Klaus H. Ploog;
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作者单位

COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
low dimensional structures; molecular beam epitaxy; semiconducting III-V materials;

机译：低维结构；分子束外延半导体III-V材料;

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专利

1. MBE of quantum wires and quantum dots [J] . Richard Notzel, Klaus H.Ploog Journal of Crystal Growth . 2001,第期

机译：量子线和量子点的MBE
2. Novel quantum wire and quantum dot structures on patterned high-index surfaces by hydrogen-assisted MBE [J] . klaus H. Ploog, Richard Notzel Microelectronic Engineering . 1999,第1a4期

机译：氢辅助MBE在图案化高折射率表面上的新型量子线和量子点结构
3. Tuning Between Quantum-Dot- and Quantum-Well-Like Behaviors in Type II ZnTe Submonolayer Quantum Dots by Controlling Tellurium Flux During MBE Growth [J] . H. JI, B. ROY, S. DHOMKAR, Journal of Electronic Materials . 2013,第11期

机译：在MBE生长过程中通过控制碲通量来调节II型ZnTe亚单层量子点中的量子点和量子阱相似行为
4. MBE of quantum wires and quantum dots [C] . Klaus H. Ploog, Richard Noeted International conference on molecular beam epitaxy . 2001

机译：量子线和量子点的MBE
5. Path Integral Monte Carlo Simulations of Semiconductor Quantum Dots and Quantum Wires. [D] . Zhang, Lei. 2011

机译：半导体量子点和量子线的路径积分蒙特卡罗模拟。
6. Initial stage growth of GexSi1−x layers and Ge quantum dot formation on GexSi1−x surface by MBE [O] . Aleksandr I Nikiforov, Vyacheslav A Timofeev, Serge A Teys, 2012

机译：MBE在GexSi1-x层的初始生长和在GexSi1-x表面上的Ge量子点的形成
7. A theoretical study of electron transport through a quantum wire (QW) with a side quantum dots (QD’s) array and quantum point contacts (QPCs) and evaluation of conductance as a function of Fermi energy [O] . 2017

机译：用侧量子点（QD）阵列和量子点触点（QPC）通过量子丝（QW）电子传输的理论研究，并作为费米能量的函数评估

MBE of quantum wires and quantum dots

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