首页> 外文会议>International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China >The fractional-dimensional space approach to MBE-grown quantum-sized semiconductor low-dimensional systems
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The fractional-dimensional space approach to MBE-grown quantum-sized semiconductor low-dimensional systems

机译:MBE生长的量子尺寸半导体低维系统的分数维空间方法

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Shallow impurities and excitons in MBE-grown quantum-sized semiconductor low-dimensional systems are studied within the fractional-dimensional space approach. We present calculations for shallow-donor states in GaAs-(Ga,Al)As quantum wells and superlattices and for excitons in GaAs-(Ga,Al)As quantum wells and symmetric-coupled double quantum wells. Effects of growth-direction applied magnetic fields are also considered. Results are shown to be in good agreement with previous variational calculations and available experimental measurements.
机译:在分数维空间方法中,研究了MBE生长的量子尺寸半导体低维系统中的浅杂质和激子。我们介绍了GaAs-(Ga,Al)As量子阱和超晶格中浅施主态的计算以及GaAs-(Ga,Al)As量子阱和对称耦合双量子阱中激子的计算。还考虑了生长方向施加的磁场的影响。结果表明与先前的变异计算和可用的实验测量结果非常吻合。

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