MBE-based SiGe/Si heterojunction multilayer structures

机译：基于MBE的SiGe / Si异质结多层结构

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, SiGe/Si multilayer heterostructures prepared by molecular beam epitaxy (MBE) are described with the aim of manufacturing SiGe heterojunction bipolar transistors (HBTs). Based on the simulations made by Medici, device structures have been designed and grown. The quality of the MBE layered structures has been characterized by reflection high-energy electron diffraction, X-ray diffraction, secondary ion mass spectrometry and spreading resistance. Furthermore, SiGe-HBTs have been fabricated. Promising DC and RF results of processed HBT devices have been obtained.

机译：在本文中，描述了通过分子束外延（MBE）制备的SiGe / Si多层异质结构，旨在制造SiGe异质结双极晶体管（HBT）。基于Medici的仿真，已经设计并开发了设备结构。 MBE层状结构的质量通过反射高能电子衍射，X射线衍射，二次离子质谱和抗扩散性来表征。此外，已经制造了SiGe-HBT。已经获得了经过处理的HBT设备的令人信服的DC和RF结果。

著录项

来源
《International Conference on Molecular Beam Epitaxy, 11th, Sep 11-15, 2000, Beijing, China》|2000年|p.744-748|共5页
会议地点 Beijing(CN)
作者
Kaicheng Li; Jing Zhang; Daoguang Liu; Qiang Yi; Lin Guo; Shiliu Xu; Wei-Xin Ni;
展开▼
作者单位

National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, People's Republic of China;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
doping; X-ray diffraction; single crystal growth; molecular beam epitaxy; germanium silicon alloys; semiconducting silicon; bipolar transistors; heterojunction semiconductor devices;

机译：掺杂X射线衍射;单晶生长分子束外延锗硅合金；半导体硅;双极晶体管；异质结半导体器件;

相似文献

外文文献
中文文献
专利

1. MBE-based SiGe/Si heterojunction multilayer structures [J] . Kaicheng Li, Jing Zhang, Daoguang Liu Journal of Crystal Growth . 2001,第期

机译：基于MBE的SiGe / Si异质结多层结构
2. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures [J] . Yablonskiy A.N., Baidakova N.A., Novikov A.V., Semiconductors . 2013,第11期

机译：多层SiGe / Si和SiGe / SOI结构中自组装Ge（Si）岛的时间分辨光致发光
3. Growth and quality control of MBE-based SiGe-HBT for amplifier applications [J] . Daoguang Liu, Siliu Xu, Kaicheng Li, Microelectronics journal . 2003,第5a8期

机译：基于MBE的SiGe-HBT用于放大器应用的增长和质量控制
4. MBE-based SiGe/Si heterojunction multilayer structures [C] . J, Wei-Xin Ni, Shiliu Xu, International conference on molecular beam epitaxy . 2001

机译：基于MBE的SIGE / SI异质结多层结构
5. Intersubband light emission and electrical bistability in SiGe/Si quantum structures. [D] . Zhu, Xuegen. 1997

机译：SiGe / Si量子结构中的子带间发光和电双稳态。
6. Ion-Beam-Induced Atomic Mixing in Ge Si and SiGe Studied by Means of Isotope Multilayer Structures [O] . Manuel Radek, Bartosz Liedke, Bernd Schmidt, 2017

机译：用同位素多层结构研究GeSi和SiGe中离子束诱导的原子混合
7. Analysis of SiGe heterojunction integrated injection logic structures using a charge stored model [O] . Wainwright S P, Hall S, Ashburn P, 1998

机译：用电荷存储模型分析siGe异质结集成注入逻辑结构

MBE-based SiGe/Si heterojunction multilayer structures

摘要

著录项

相似文献

相关主题

期刊订阅