High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

机译：在蓝宝石衬底上具有凹入式栅极的高跨导AlGaN / GaN-HEMT

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Recessed gate AlGaN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate have been fabricated. In order to improve FET performances, we optimized the layer structure and the electrode arrangement of the HEMT, and hence 0.15 μm gate-length AlGaN/GaN-HEMTs with recessed gate were successfully fabricated and the obtained transconductance was as high as 450 mS/mm. In this paper we describe the improvement of HEMT layer structures on sapphire substrate, the optimisation of an offset arrangement of gate electrodes, and the results of DC/RF measurements of our HEMTs.

机译：已经制造出在蓝宝石衬底上生长的嵌入式栅极AlGaN / GaN高电子迁移率晶体管（HEMT）。为了提高FET性能，我们优化了HEMT的层结构和电极排列，因此成功地制造了栅极长度为0.15μm的具有凹入式栅极的AlGaN / GaN-HEMT，并且获得的跨导高达450 mS / mm 。在本文中，我们描述了蓝宝石衬底上HEMT层结构的改进，栅电极偏移排列的优化以及HEMT的DC / RF测量结果。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.187-190|共4页
会议地点 Nara(JP);Nara(JP)
作者
Hideyuki Okita; Katsuaki Kaifu; Juro Mita; Tomoyuki Yamada; Yoshiaki Sano; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo;
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Advanced Device Laboratories, Oki Electric Industry Co., Ltd. 550-5 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan;

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正文语种 eng
中图分类化合物半导体;
关键词
field effect devices;

机译：场效应器件;

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专利

1. Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates [J] . KONG Xin, WEI Ke, LIU Guo-Guo, 中国物理快报：英文版 . 2012,第007期

机译：在蓝宝石衬底上具有最大振荡频率超过120 GHz的栅极嵌入式AlGaN / GaN MOSHEMT
2. Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using HfO_2 gate insulator [J] . Zhao Yaopeng, Wang Chong, Zheng Xuefeng, Solid-State Electronics . 2020,第Jana期

机译：凹陷深度对使用HfO_2栅绝缘体的Si衬底上AlGaN / GaN功率MIS-HEMT性能的影响以及不同凹陷深度的阈值电压模型
3. High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire [J] . Ilesanmi ADESIDA, Vipan KUMAR, Jinwei YANG, IEICE Transactions on Electronics . 2003,第10期

机译：蓝宝石上的高性能嵌入式AlGaN / GaN HEMT栅极
4. High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate [C] . Hideyuki Okita, Katsuaki Kaifu, Juro Mita, International conference on nitride semiconductors . 2003

机译：蓝宝石衬底上具有凹陷闸门的高跨导AlGaN / GaN-HEMT
5. Design, Fabrication, and Characterization of Pseudomorphic and Quasi-Pseudomorphic AlGaN Based Deep Ultraviolet Light Emitting Diodes Over Sapphire [D] . Asif, Fatima 2015

机译：蓝宝石上准晶和准准晶AlGaN基深紫外发光二极管的设计，制造和表征
6. Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic [O] . Tian-Li Wu, Shun-Wei Tang, Hong-Jia Jiang 2020

机译：面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
7. The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate [O] . Wu Tian-Li, Marcon Denis, De Jaeger Brice, 2015

机译：栅极介电质量对在200mm Si衬底上开发无金的D型和E型凹栅AlGaN / GaN晶体管的影响

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

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