Isoelectronic doping of AlGaN alloys

机译：AlGaN合金的等电子掺杂

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Isoelectronic doping of Al_xGa_(1-x)N alloys with arsenic in films grown by molecular beam epitaxy has been investigated. In photoluminescence spectra of these Al_xGa_(1-x)N layers, there is a gradual increase of the band gap and a smaller progressive shift of the position of blue emission band to the higher energies as the Al content increases. To explain the change in the energy of the blue band in As-doped Al_xGa_(1-x)N alloys a model has been proposed, which predicts the shift in the blue band energy to be equal to the valence band offset from AlGaN to GaN. This prediction is consistent with the experimental results.

机译：研究了分子束外延生长薄膜中砷对Al_xGa_（1-x）N合金的等电掺杂。在这些Al_xGa_（1-x）N层的光致发光光谱中，随着Al含量的增加，带隙逐渐增加，蓝色发射带的位置向较高能量的方向逐渐减小。为了解释掺杂As的Al_xGa_（1-x）N合金中蓝带能量的变化，提出了一个模型，该模型预测蓝带能量的偏移等于从AlGaN到GaN的价带偏移。。该预测与实验结果一致。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.408-411|共4页
会议地点 Nara(JP);Nara(JP)
作者
S. V. Novikov; L. X. Zhao; I. Harrison; C. T. Foxon;
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作者单位

School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
III-V semiconductors; III-V semiconductors; molecular, atomic, ion, and chemical beam epitaxy;

机译：III-V半导体; III-V半导体;分子，原子，离子和化学束外延;

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专利

1. Isoelectronic doping of AlGaN alloys [J] . Novikov SV., Zhao LX., Harrison I., Physica status solidi, B. Basic research . 2003,第2期

机译：AlGaN合金的等电子掺杂
2. High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes [J] . Zhou Shengjun, Xu Haohao, Hu Hongpo, Applied Surface Science . 2019,第MARa31期

机译：等离子掺杂的高质量GaN缓冲层及其在365 nm InGaN / AlGaN紫外发光二极管中的应用
3. The Improvement of DC Performance in AlGaN-GaN HEFTs With Isoelectronic Al-Doped Channels [J] . Chang Min Jeon, Jae-Hoon Lee, Jung-Hee Lee, IEEE Electron Device Letters . 2004,第3期

机译：等电铝掺杂通道改善AlGaN-GaN HEFT中的直流性能
4. Isoelectronic doping of AlGaN alloys [C] . S. V. Novikov, L. X. Zhao, I. Harrison, International conference on nitride semiconductors . 2003

机译：Algan合金的异形掺杂
5. The luminescence properties of the wide bandgap nitrides doped with rare earth ions and gallium nitride doped with conventional isoelectronic impurities. [D] . Jadwisienczak, Wojciech M. 2001

机译：掺杂有稀土离子的宽带隙氮化物和掺杂有常规等电子杂质的氮化镓的发光特性。
6. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice [O] . Xiao Wang, Wei Wang, Jingli Wang, -1

机译：（AlN）m /（GaN）n超晶格中MgGaδ掺杂降低高Al含量AlGaN合金中Mg活化能的实验证据
7. Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice [O] . Xiao Wang, Wei Wang, Jingli Wang, 2017

机译：通过MGGAδ掺杂在（ALN）M /（GaN）N超晶格中通过MGGAδ降低Mg激活能量的实验证据
8. Trap Suppression by Isoelectronic In or Sb Doping in Si-Doped n-GaAs Grown by Molecular-Beam Epitaxy [R] . Li, A. Z., Kim, H. K., Jeong, J. C., 1988

机译：分子束外延生长的si掺杂n-Gaas中等电子In或sb掺杂对陷阱的抑制

Isoelectronic doping of AlGaN alloys

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