Spatially resolved cathodoluminescence study of selected-area ELO-GaN grown on Si(111) substrates

机译：在Si（111）衬底上生长的选定区域ELO-GaN的空间分辨阴极发光研究

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Crack-free thick ( > 10 μm) GaN layers that were grown on Si(111) substrates using selected-area epitaxial lateral overgrowth (ELO) method were investigated by spatially resolved cathodoluminescence microscopy at 15 K. ELO-mask materials employed in this study are SiO_2 deposited by sputtering and SiN_x formed by nitriding Si-surface areas (grooves) between GaN seeds. Local CL spectra near the GaN surface exhibited sharp excitonic luminescence with FWHM of 4.3 meV for the layers grown on a SiO_2-masked Si substrate. The intensity of the sharp excitonic luminescence continued to increase, without any observable saturation, as the sampling position approaches to the surface. It is experimentally proven that thick high-quality GaN without cracks can be grown on Si(111).

机译：通过空间分辨阴极发光显微镜在15 K下研究了使用选择区域外延横向过生长（ELO）方法在Si（111）衬底上生长的无裂纹厚（> 10μm）GaN层。本研究中使用的ELO掩模材料是通过溅射沉积的SiO_2和通过氮化GaN晶种之间的Si表面积（沟槽）形成的SiN_x。 GaN表面附近的局部CL光谱对于在SiO_2掩膜的Si衬底上生长的层表现出清晰的激子发光，FWHM为4.3 meV。随着采样位置接近表面，急剧的激子发光强度持续增加，没有任何可观察到的饱和。实验证明，可以在Si（111）上生长没有裂纹的厚且高质量的GaN。

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《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2644-2649|共6页
会议地点 Nara(JP);Nara(JP)
作者
H. Naoi; M. Narukawa; H. Miyake; K. Hiramatsu;
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作者单位

Satellite Venture Business Laboratory, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
linear defects: dislocations, disclinations; scanning electron microscopy (SEM) (including EBIC); cathodoluminescence, ionoluminescence; III-V semiconductors; chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.);

机译：线性缺陷：位错，错位；扫描电子显微镜（SEM）（包括EBIC）；阴极发光，电离发光； III-V半导体；化学气相沉积（包括等离子体增强CVD，MOCVD等）;

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机译：金属有机气相外延在独立（001）3C-SiC和GaAs衬底上生长的立方GaN膜的截面空间分辨阴极发光研究
2. Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane ln_(0.05)Ga_(0.95)N Epilayer Grown on a Freestanding GaN Substrate [J] . Munehito Kagaya, Pierre Corfdir, Jean-Daniel Ganiere, Japanese journal of applied physics . 2011,第11Issue1期

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3. Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy [J] . R. I. Barabash, C. Roder, G. E. Ice, Journal of Applied Physics . 2006,第5期

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Spatially resolved cathodoluminescence study of selected-area ELO-GaN grown on Si(111) substrates

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