Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO_2 layers

机译：具有光化学气相沉积SiO_2层的低界面态密度AlGaN / GaN MOSHFET

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High quality SiO_2 was successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using D_2 lamp as the excitation source. It was found that the interface state density was only 1.1 x 10~(11) cm~(-2)eV~(-1). AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were also fabricated with such photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, it was found that we could reduce the gate leakage current by more than four orders of magnitude by inserting the 32 nm-thick photo-CVD SiO_2 layer between AlGaN/GaN and gate metal. With a 1 μm gate length, it was found that room temperature saturated I_(ds), maximum g_m and gate voltage swing (GVS) of the fabricated nitride-based MOSHFET are 800 mA/mm, 86 mS/mm and 9 V, respectively.

机译：以D_2灯为激发源，通过光化学气相沉积（photo-CVD）成功地在AlGaN上沉积了高质量的SiO_2。发现界面态密度仅为1.1×10〜（11）cm〜（-2）eV〜（-1）。还使用这种光CVD氧化物作为绝缘层来制造AlGaN / GaN金属氧化物半导体异质结场效应晶体管（MOSHFET）。与具有类似结构的AlGaN / GaN金属半导体HFET（MESHFET）相比，我们发现，通过在AlGaN / GaN之间插入32 nm厚的光化学CVD SiO_2层，可以将栅极漏电流降低四个数量级以上。和门金属。栅极长度为1μm时，发现制造的氮化物基MOSHFET的室温饱和I_（ds），最大g_m和栅极电压摆幅（GVS）分别为800 mA / mm，86 mS / mm和9V。。

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《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2355-2359|共5页
会议地点 Nara(JP);Nara(JP)
作者
C. K. Wang; S. J. Chang; Y. K. Su; Y. Z. Chiou; T. K. Lin; B. R. Huang;
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作者单位

Institute of Microelectronics Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
electron states at surfaces and interfaces; metal-insulator-semiconductor structures (including semiconductor-to-insulator); chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.); field effect devices;

机译：表面和界面上的电子状态；金属-绝缘体-半导体结构（包括半导体到绝缘体）；化学气相沉积（包括等离子体增强CVD，MOCVD等）；场效应器件;

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专利

1. High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer [J] . Chun-Kai WANG, Shoou-Jinn CHANG, Yan-Kuin SU, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

机译：光化学气相沉积SiO_2层的AlGaN / GaN / AlGaN双异质结构金属氧化物半导体半结构场效应晶体管的高温性能和低频噪声特性
2. Noise Analysis of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors with Photochemical-Vapor Deposition SiO_2 Layers [J] . Yu-Zung CHIOU Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

机译：光化学气相沉积SiO_2层的AlGaN / GaN金属氧化物半导体异质结构场效应晶体管的噪声分析
3. High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO_2 layer [J] . C.K. Wang, R.W. Chuang, S.J. Chang Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2005,第1期

机译：具有光化学气相沉积SiO_2层的AlGaN / GaN MOS-HFET的高温和高频特性
4. Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO_2 layers [C] . C. K. Wang, S. J. Chang, Y. K. Su, International conference on nitride semiconductors . 2003

机译：低接口状态密度AlGaN / GaN Moshfet采用光化学气相沉积SiO_2层
5. AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability [D] . Azam, Faisal. 2018

机译：Algan / GaN Moshfet使用ALD电介质：性能和可靠性研究
6. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers [O] . Ya-Ju Lee, Yung-Chi Yao, Chun-Ying Huang, 2014

机译：使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
7. Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/ GaN MOS HEMTs: Impact of deposition conditions on interface state density [O] . Ťapajna Milan, Válik Lukáš, Gucmann Filip, 2017

机译：用于GaN / AlGaN / GaN MOS HEMT的低温原子层沉积生长的Al2O3栅极电介质：沉积条件对界面态密度的影响

Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO_2 layers

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