Exciton localization in InGaN/GaN single quantum well structures

机译：InGaN / GaN单量子阱结构中的激子定位

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We have performed a detailed investigation of the low temperature (T = 6 K) photoluminescence spectra and recombination lifetimes of localized excitons in a set of InGaN/GaN single quantum wells in which the indium fraction in the quantum well was varied. We found that with increasing indium fraction the photoluminescence peak emission moved to lower energy and the intensities of the phonon replicas relative to the zero-phonon line increased. From a multi-Gaussian fit of the experimental data, we extracted the Huang-Rhys factor (S), a measure of the strength of the exciton coupling with LO-phonons. By comparing experimental S factors with the results of a theoretical model, we found that the excitons localize on a length scale of ～2 nm in our samples.

机译：我们对一组InGaN / GaN单量子阱（其中量子阱中的铟含量发生了变化）的低温（T = 6 K）光致发光光谱和局部激子的复合寿命进行了详细研究。我们发现，随着铟含量的增加，光致发光峰发射移至更低的能量，并且声子复制体相对于零声子线的强度增加。从实验数据的多高斯拟合中，我们提取了Huang-Rhys因子（S），这是激子与LO声子耦合强度的度量。通过将实验性S因子与理论模型的结果进行比较，我们发现激子在样品中的定位范围为〜2 nm。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.344-347|共4页
会议地点 Nara(JP);Nara(JP)
作者
D. M. Graham; A. Soltani Vala; P. Dawson; M. J. Godfrey; M. J. Kappers; T. M. Smeeton; J. S. Barnard; C. J. Humphreys; E. J. Thrush;
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Department of Physics, UMIST, P.O. Box 88, Manchester, M60 1QD, UK;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
excitons and related phenomena; time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter; III-V semiconductors; quantum wells;

机译：激子和相关现象;时间分辨光谱学和凝聚态物质的其他超快光学测量; III-V族半导体;量子阱;

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专利

1. Exciton localization in InGaN/GaN single quantum well structures [J] . Graham DM., Vala AS., Dawson P., Physica status solidi, B. Basic research . 2003,第2期

机译：InGaN / GaN单量子阱结构中的激子定位
2. Correlating exciton localization with compositional fluctuations in InGaN/GaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms [J] . S. Khatsevich, D. H. Rich, X. Zhang, Journal of Applied Physics . 2007,第9期

机译：在GaN平面和GaN三角棱镜的晶面上生长的InGaN / GaN量子阱中，激子本地化与成分波动相关
3. Temperature induced anomalous exciton localization in InGaN/GaN and GaN/AlInN quantum wells [J] . Md. Soyaeb Hasan, Md. Sherajul Islam, Md. Rafiqul Islam, Journal of Computational Electronics . 2018,第1期

机译：温度引起的InGaN / GaN和GaN / AlInN量子阱中的异常激子局域化
4. Exciton localization in InGaN/GaN single quantum well structures [C] . D. M. Graham, A. Soltani Vala, P. Dawson, International conference on nitride semiconductors . 2003

机译：IngaN / GaN单量子井结构中的激子定位
5. Optical Studies of Polar InGaN/GaN Quantum Well Structures [D] . Blenkhorn, William. 2016

机译：极性InGaN / GaN量子阱结构的光学研究
6. Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells [O] . George Christian, Menno Kappers, Fabien Massabuau, 2018

机译：掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
7. Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots [O] . Winkelnkemper, M., Dworzak, M., Bartel, T. P., 2008

机译：中国本土化激子广泛寿命分布的起源 InGaN / GaN量子点
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

Exciton localization in InGaN/GaN single quantum well structures

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