Memory elements based on thin film field-effect transistor

机译：基于薄膜场效应晶体管的存储元件

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report the preparation and investigation of heterostructures based on ferroelectric crystals and semiconductor films. The ferroelectric field effect transistor with high transparency for visible light and high field mobility of the charge carriers has been fabricated using ZnO:Li films as a transistor channel. The possibility of use of ferroelectric field effect transistor based on ZnO:Li films as bistable element for information writing has been shown.

机译：我们报告了基于铁电晶体和半导体膜的异质结构的制备和研究。使用ZnO：Li薄膜作为晶体管通道，已经制造了对可见光具有高透明度和电荷载流子具有高场迁移率的铁电场效应晶体管。已经显示出使用基于ZnO：Li膜的铁电场效应晶体管作为双稳态元件进行信息写入的可能性。

著录项

来源
《International conference on laser physics 2010》|2010年|p.1-6|共6页
会议地点 Ashtarak(AM)
作者
Natella R. Aghamalyan; Ruben K. Hovsepyan; Evgenia A. Kafadaryan; Silva I. Petrosyan; Armen R. Poghosyan; Eduard S. Vardanyan;
展开▼
作者单位

Institute for Physical Research (Armenia);

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类激光物理和基本理论;
关键词

相似文献

外文文献
中文文献
专利

1. Light-responsive spiropyran based polymer thin films for use in organic field-effect transistor memories [J] . Jeong Yong Jin, Yoo Eun Joo, Kim Lae Ho, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2016,第23期

机译：用于有机场效应晶体管存储器的基于光响应螺吡喃的聚合物薄膜
2. Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors With Metal–Ferroelectric–Metal–Insulator–Semiconductor Gate-Stacks Using Al-Doped HfO2 Thin Films [J] . Yoon So-Jung, Min Dae-Hong, Moon Seung-Eon, IEEE Transactions on Electron Devices . 2020,第2期

机译：使用Al-掺杂的HFO2薄膜的金属 - 铁电 - 绝缘子 - 半导体栅极叠层的铁电场效应存储器晶体管的长期和高温保留稳定性的改进
3. Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy [J] . Marc Courté, Sandeep G. Surya, Ramesh Thamankar, RSC Advances . 2017,第16期

机译：校正：在场效应晶体管中和通过导电原子力显微镜观察到的2,2'，6,6'-四苯基-二吡喃亚烷基薄膜中的非易失性电阻记忆效应
4. Memory elements based on thin film field-effect transistor [C] . Natella R. Aghamalyan, Ruben K. Hovsepyan, Evgenia A. Kafadaryan, International conference on laser physics . 2011

机译：基于薄膜场效应晶体管的存储器元件
5. Nano-assembled carbon nanotube thin film based microstructures, field-effect transistors, and acetylcholine biosensors. [D] . Xue, Wei. 2007

机译：基于纳米组装的碳纳米管薄膜的微结构，场效应晶体管和乙酰胆碱生物传感器。
6. High-Performance ZnPc Thin Film-Based PhotosensitiveOrganic Field-Effect Transistors: Influence of Multilayer DielectricSystems and Thin Film Growth Structure [O] . Anamika Dey, Ashish Singh, Dipjyoti Das, 2017

机译：高性能ZnPc薄膜光敏材料有机场效应晶体管：多层电介质的影响系统和薄膜生长结构
7. Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene-Thiophene Oligomers as n-Type Semiconductors. Molecular Structure-Film Microstructure-Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements [O] . -1

机译：DIPELFOLOROO辛基取代的苯基 - 噻吩低聚物作为N型半导体的合成与表征。分子结构膜微结构 - 迁移率关系，有机场效应晶体管和晶体管非易失性存储器元件
8. Characterizing the Sensitivity, Selectivity, and Reversibility of the Metal-DopedPhthalocyanine Thin-Films Used with the Interdigitated Gate Electrode Field-Effect Transistor (IGEFET) to Detect Organophosphorous Compounds and Nitrogen Dioxide [R] . Howe, C. P. 1991

机译：表征金属掺杂酞菁薄膜的灵敏度，选择性和可逆性，与交叉栅极电极场效应晶体管（IGEFET）一起检测有机磷化合物和二氧化氮

Memory elements based on thin film field-effect transistor

摘要

著录项

相似文献

相关主题

期刊订阅