Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts

机译：用于SiC器件的重掺杂Al p型接触层的液相外延生长及其形成的欧姆接触

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In this pap er we report on ohmic contacts to p-type silicon carbide with record low specific contact resistance. The contacts were formed to p~+-SiC layers with high Al concentration grown by liquid phase epitaxy (LPE) on 2 inch 6H and 4H-SiC samples. Al atomic concentration in LPE grown layers exceeded 1x10~(20) cm~(-3). Ti-Al ohmic contacts with contact resistivity in 10~(-6)Ωxcm~2 range were fabricated to both p-6H-SiC and p-4H-SiC materials in reproducible manner. Developed LPE technology may substitute ion implantation technique for p~+-contact layer formation for power SiC devices.

机译：在这篇论文中，我们报告了与p型碳化硅的欧姆接触，其接触电阻低至创纪录的水平。通过液相外延（LPE）在2英寸6H和4H-SiC样品上形成高Al浓度的p〜+ -SiC层。 LPE生长层中的Al原子浓度超过1x10〜（20）cm〜（-3）。以可重复的方式，对p-6H-SiC和p-4H-SiC材料分别制造了接触电阻率为10〜（-6）Ωxcm〜2范围的Ti-Al欧姆接触。发达的LPE技术可以替代离子注入技术来形成功率SiC器件的p〜+接触层。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.291-294|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
A. Syrkin; V. Dmitriev; O. Kovalenkov; D. Bauman; J. Crofton;
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作者单位

Technologies and Devices International, Inc., Gaithersburg MD 20877, USA;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
liquid-phase epitaxy; ohmic contacts; silicon carbide devices;

机译：液相外延;欧姆接触;碳化硅器件;

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1. Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth [J] . B. KRISHNAN, S.P. KOTAMRAJU, G. MELNYCHUK, Journal of Electronic Materials . 2010,第1期

机译：低温同质外延生长产生的p型4H-SiC欧姆接触形成重掺杂铝外延层
2. Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth [J] . B. Krishnan, S.P. Kotamraju, G. Melnychuk, Journal of Electronic Materials . 2010,第1期

机译：低温同质外延生长产生p型4H-SiC欧姆接触形成重掺杂铝外延层
3. Ni/Au Ohmic contacts to p-type Mg-doped CuCrO_2 epitaxial layers [J] . W. T. Lim, L. Stafford, P. W. Sadik, Applied Physics Letters . 2007,第14期

机译：Ni / Au欧姆接触到p型掺杂Mg的CuCrO_2外延层
4. Aluminum Doping by Low-temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-type 4H-SiC [C] . Bharat Krishnan, Siva Prasad Kotamraju, Galyna Melnychuk, Silicon carbide and related materials 2008 . 2008

机译：低温同质外延生长铝掺杂的p型4H-SiC的Ni欧姆接触
5. Epitaxial growth and ohmic contacts on manganese arsenide tilted superlattices. [D] . Heo, Dongho. 2005

机译：砷化锰倾斜超晶格上的外延生长和欧姆接触。
6. Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings [O] . Monia Spera, Giuseppe Greco, Domenico Corso, 2019

机译：在不同的注入后退火后p型铝注入的4H-SiC层上的欧姆接触
7. Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts [O] . Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo-Ha, 2014

机译：高效掺杂4H-SIC：引脚二极管蒸汽液 - 固体选择性外延的应用及欧姆触点的特定接触电阻的销二极管
8. Defects and Impurities in 4H- and 6H-SiC Homoepitaxial Layers: Identification, Origin, Effect on Properties of Ohmic Contacts and Insulating Layers and Reduction [R] . Davis, R. F. , Aboelfotoh, M. O. , Baliga, B. J. , 1998

机译：4H-和6H-siC同质外延层中的缺陷和杂质：识别，起源，对欧姆接触和绝缘层性能的影响和还原

Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts

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