4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots

机译：PVT生长的6H-SiC铸锭中的4H多型晶粒形成

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Multi-domained PVT (physical vapor transport)-grown 6H-SiC ingots, in which large 4H-SiC grains exist with their crystal directions strongly misoriented with regard to the single crystal matrix geometry, are investigated extensively from the viewpoint of the generation mechanism of the misoriented grains. Microstructural observations reveal that there exist a number of fine SiC inclusions inside the 6H-SiC matrix. We suggest that these inclusions are likely to be the embryos of the misoriented grains.

机译：从产生机理的观点出发，广泛地研究了多畴PVT（物理气相传输）生长的6H-SiC铸锭，其中存在大的4H-SiC晶粒，且其晶体方向相对于单晶基质几何形状有很大的方向性。谷物方向错误。显微组织观察表明，6H-SiC基体内存在许多细小的SiC夹杂物。我们建议这些夹杂物可能是取向错误的谷物的胚芽。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.47-50|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
T. Fujimoto; M. Katsuno; N. Ohtani; T. Aigo; H. Yashiro;
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作者单位

Nippon Steel Corporation, Advanced Technology Research Laboratories, 20-1 Shintomi, Futtsu, Chiba 293-8511, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
crystal orientation; multi-domain ingot; X-ray pole figure;

机译：晶体取向；多晶锭； X射线极图;

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1. Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach [J] . Kyung-Han Kang, Taihee Eun, Myong-Chul Jun, Journal of Crystal Growth . 2014,第mara1期

机译：SiC晶体生长过程中形成4H或6H-SiC多型体的控制因素：原子计算方法
2. Mechanisms of defect formation in ingots of 4H Silicon Carbide Polytype [J] . Avrov D.D., Bulatov A.V., Dorozhkin S.I., Semiconductors . 2011,第3期

机译：4H碳化硅多晶型钢锭缺陷形成的机理
3. Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method [J] . E. Tymicki, K. Grasza, K. Racka, Materials science forum . 2012,第PTa1期

机译：PVT法氮掺杂对6H-SiC种子4H多型生长的影响
4. Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method [C] . E. Tymicki, K. Grasza, K. Racka, ICSCRM 2011;International conference on silicon carbide and related materials . 2012

机译：PVT法氮掺杂对6H-SiC种子4H多型生长的影响
5. Optical characterization of 4H silicon carbide polytype by electromodulation spectroscopy. [D] . Demir, Gazi. 2004

机译：通过电调制光谱对4H碳化硅多型体进行光学表征。
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7. Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO [O] . Zheng Huang, Tie-Yu Lü, Hui-Qiong Wang, 2015

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4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots

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