Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers

机译：LPCVD在Si（100）上生长3C-SiC以及生长层的图案化

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A low-cost approach to 3C-SiC low pressure chemical vapour deposition (LPCVD) growth and patterning have been developed and is described. LPCVD with ultra violet (UV) stimulation is used as a technique for the low-temperature growth of SiC on Si with a patterned SiO_2 or silicon nitride mask. Examples of surface micromachined structures patterned by the described lift-off approach with an excellent etching selectivity of Si to SiC are presented. The approach to growth and patterning of SiC on Si can be employed for further pendeo-epitaxial growth or fabrication of micromechanical devices, gas sensors, or biomedical applications.

机译：已经开发并描述了一种低成本的3C-SiC低压化学气相沉积（LPCVD）生长和构图方法。具有紫外线（UV）刺激的LPCVD用作在图案化的SiO_2或氮化硅掩模上在Si上低温生长SiC的技术。给出了通过所述剥离方法图案化的表面微机械结构的示例，该结构具有极好的Si对SiC的蚀刻选择性。 Si上SiC的生长和构图方法可用于进一步的外延外延生长或微机械器件，气体传感器或生物医学应用的制造。

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《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.327-330|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
A. Bakin; I. Behrens; A. Ivanov; E. Peiner; D. Piester; H.-H. Wehmann; A. Schlachetzki;
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作者单位

Institute for Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Str. 66, DE-38106 Braunschweig, Germany;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
CVD; patterning; selective etching; selective growth; SiC on silicon;

机译：CVD;构图;选择性刻蚀;选择性生长;硅基碳化硅;

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1. Growth of 3C-SiC on Si(100) by LPCVD using a modified process after the clean step [J] . Zhifei Zhao, Yun Li, Zhijun Yin, Journal of materials science . 2016,第7期

机译：清洁步骤后，采用改良工艺通过LPCVD在Si（100）上生长3C-SiC
2. Deposition of Polycrystalline 3C-SiC Films on 100 mm Diameter Si(100) Wafers in a Large-Volume LPCVD Furnace [J] . C. A. Zorman, S. Rajgopal, X. A. Fu Electrochemical and solid-state letters . 2002,第10期

机译：在大容量LPCVD炉中在100毫米直径Si（100）晶片上沉积多晶3C-SiC膜
3. Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS transport using CVD-grown 3C-SiC Seeding Layer [J] . Stephane Berckmans, Laurent Auvray, Gabriel Ferro, Materials science forum . 2012,第期

机译：使用CVD生长的3C-SiC种子层通过VLS传输在硅衬底上外延生长3C-SiC
4. TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds [C] . M. Marinova, G. Zoulis, T. Robert, Silicon carbide and related materials 2009 . 2010

机译：LPE在（100）和（111）3C-SiC种子上生长的3C-SiC层的TEM和LTPL研究
5. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications. [D] . Shintri, Shashidhar S. 2012

机译：纳米图案化硅上金属有机气相外延生长的（211）B碲化镉缓冲层的生长和表征，用于基于碲化汞的红外探测器。
6. Growth of Large-Area Stress-Free and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth [O] . Philipp Schuh, Francesco La Via, Marco Mauceri, 2019

机译：使用3C-SiC-on-Si在气相生长中生长大面积无应力且类似块状的3C-SiC（100）
7. In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD [O] . Guosheng Sun, Yongmei Zhao, Liang Wang, 2016

机译：热壁LpCVD生长4H-siC同质外延层中的原位硼和铝掺杂及其记忆效应
8. Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers [R] . Neudeck, P. G. , Powell, J. A. , Trunek, A. J. , 2004

机译：在图案化的4H / 6H-siC台面和悬臂上的3C-siC层的自由表面异质外延

Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown Layers

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