Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation

机译：紫外激发下光致发光表征SiC外延晶片

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We have demonstrated that photoluminescence (PL) under 266 nm light excitation is advantageous for characterizing thin epitaxial SiC layers. The penetration depths of the light are about 1.2 and 1.0 μm for 4H- and 6H-SiC crystals, respectively, which makes the emission from the substrate negligible for wafers with an epitaxial layer thicker than 5 μm. The appearance of band-edge emission and the disappearance of deep-level emission in the epitaxial layer and vice versa in the substrate agreed with the general trend of the superiority of crystalline quality of the epitaxial layer. One example of PL wafer mapping showed that the nonuniformity in the epitaxial layer was caused during the epitaxial growth and was not transferred from that in the substrate.

机译：我们已经证明，在266 nm光激发下的光致发光（PL）对于表征薄外延SiC层是有利的。对于4H-SiC和6H-SiC晶体，光的穿透深度分别约为1.2和1.0μm，这使得对于外延层厚度大于5μm的晶片，基板的发射微不足道。在外延层中带边缘发射的出现和深层发射的消失，以及在衬底中反之亦然，这与外延层的晶体质量优越的总趋势一致。 PL晶片映射的一个实例表明，外延层中的不均匀性是在外延生长期间引起的，并且不从基板中的不均匀性转移。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.597-600|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
M. Tajima; M. Tanaka; N. Hoshino;
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作者单位

Institute of Space and Astronautical Sciences, Yoshinodai, Sagamihara 229-8510, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
deep-level; epitaxial layers; mapping; nonuniformity; photoluminescence;

机译：深层;外延层;映射;不均匀性;光致发光;

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3. Nondestructive characterization of dislocations and micropipes in high-resistivity 6H-SiC wafers by deep-level photoluminescence mapping [J] . M. Tajima, E. Higashi, T. Hayashi, Applied Physics Letters . 2005,第6期

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Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation

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