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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan >Characterisation and Defects in Silicon Carbide
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Characterisation and Defects in Silicon Carbide

机译：碳化硅的特征与缺陷

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摘要

In this work we present experimental results of several defects in 4H SiC that are of interest both from a fundamental and physical point of view. And also of great importance for device applications utilizing the SiC material. These defects include the temperature stable so called D1 defect, which is created after irradiation. This optical emission has been identified as an isoelectronic defect bound at a hole attractive pseudodonor, and we have been able to correlate this to the electrically observed hole trap HS1 seen in minority carrier transient spectroscopy (MCTS). It also includes the UD1 defect observed using absorption and FTIR and which is believed to be responsible for the semi-insulating behavior of material grown by the High temperature, HTCVD technique. Finally, we have described the formation and properties of critical, generated defect in high power SiC bipolar devices. This is identified as a stacking fault in the SiC basal plane, using mainly white beam synchrotron Xray topography. The stacking fault is both optically and electrically active, by forming extended local potential reduction of the conduction band.
机译：在这项工作中，我们介绍了4H SiC中几种缺陷的实验结果，这些缺陷从基本和物理的角度都令人关注。对于使用SiC材料的设备应用也非常重要。这些缺陷包括在辐照后产生的温度稳定的所谓D1缺陷。该光发射已被识别为在空穴吸引的伪供体上结合的等电子缺陷，我们已经能够将其与在少数载流子瞬态光谱法（MCTS）中看到的电观察空穴陷阱HS1相关联。它还包括使用吸收和FTIR观察到的UD1缺陷，据信这是通过高温HTCVD技术生长的材料的半绝缘行为的原因。最后，我们描述了高功率SiC双极型器件中关键的，产生的缺陷的形成和特性。这主要是通过使用白光束同步加速器X射线形貌将其识别为SiC基面中的堆叠缺陷。通过形成导带的扩展局部电势减小，堆叠故障既在光学上又在电学上有效。

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