3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

机译：化学气相沉积和肖特基势垒结特性的3C-SiC（100）同质外延生长

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We have carried out homoepitaxial growth of 3C-SiC on thick 3C-SiC free standing crystals and evaluated the characteristics of the epilayers by Nomarski differential interference contrast microscopy (NDIC), atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. We fabricated Schottky barrier structures on these epilayers and investigated the junction properties. We found that the current-voltage (I-V) characteristics of the Schottky barrier junctions (SBJs) exceed the theoretical limit of Si diodes.

机译：我们已经在厚的3C-SiC自由站立晶体上进行了3C-SiC的同质外延生长，并通过Nomarski微分干涉对比显微镜（NDIC），原子力显微镜（AFM）和X射线衍射（XRD）测量评估了外延层的特性。我们在这些外延层上制造了肖特基势垒结构，并研究了结特性。我们发现肖特基势垒结（SBJs）的电流-电压（I-V）特性超过了Si二极管的理论极限。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.275-278|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
Y. Ishida; M. Kushibe; T. Takahashi; H. Okumura; S. Yoshida;
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作者单位

National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
3C-SiC; homoepitaxial growth; schottky barrier junctions;

机译：3C-SiC；同质外延生长；肖特基势垒结;

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专利

1. Growth of 3C-SiC on Si(100) by Low Pressure Chemical Vapor Deposition Using a Modified Four-Step Process [J] . Chen WY, Chen CC, Hwang J, Crystal growth & design . 2009,第6期

机译：改进的四步法通过低压化学气相沉积法在Si（100）上生长3C-SiC
2. Heteroepitaxial growth of 3C-SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane [J] . Y. Morikawa, M. Hirai, A. Ohi, Journal of Materials Research . 2007,第5期

机译：使用单甲基硅烷通过等离子化学气相沉积在Si（100）衬底上异质外延生长3C-SiC膜
3. Fabrication and Electrical Characteristics of Schottky Diode on Ag/Poly-Si Deposited by Sub Atmospheric Pressure Chemical Vapor Deposition and Low Pressure Chemical Vapor Deposition [J] . N. Benseddik, M. Amrani, Z. Benamara, Sensor Letters: A Journal Dedicated to all Aspects of Sensors in Science, Engineering, and Medicine . 2009,第5期

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4. Effects of Growth Conditions on the Low TemperaturePhotoluminescence Spectra of (111) 3C-SiC LayersGrown by Chemical Vapor Deposition on 3C-SiC Seedsgrown by the Vapor-Liquid-Solid Technique [C] . G. Zoulis, J.W. Sun, N. Jegenyes, Symposium on Wide Bandgap Cubic Semiconductors: From Growth to Devices . 2010

机译：汽液固体技术对3C-SiC Seedgrown的化学气相沉积（111）3C-SiC层的低温致发光光谱的生长条件的影响
5. Remote plasma chemical vapor deposition of zirconium boride: Growth and diffusion barrier characteristics. [D] . Sung, Junghwan. 2001

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6. Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition [O] . Guoqing Miao, Dengwei Zhang 2012

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7. Defect-insensitive current–voltage characteristics of Schottky barrier diode formed on heteroepitaxial α-Ga2O3 grown by mist chemical vapor deposition [O] . Takuya Maeda, Mitsuru Okigawa, Yuji Kato, 2020

机译：雾化化学气相沉积的异质轴α-GA2O3形成的肖特基势垒二极管的缺陷不敏感电流 - 电压特性
8. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition [R] . 1997

机译：通过微波等离子体辅助化学气相沉积在高温下高生长率同质外延金刚石膜沉积

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

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