Adsorbate Effects of the Surface Structure of 6H-SiC(0001) 3~(1/2) x 3~(1/2)-R30°

机译：6H-SiC（0001）3〜（1/2）x 3〜（1/2）-R30°表面结构的吸附效应

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Adsorbate effect of the surface structure of 6H-SiC(0001)3~(1/2)x3~(1/2)- R30°surfaces has been studied by rocking curves of reflection high energy electron diffraction (RHEED) intensities and Auger electron spectroscopy (AES). Two types of 3~(1/2)x3~(1/2) surfaces, silicon rich and carbon rich surfaces, were observed in a series of an annealing process. In order to find what causes the phase transition from the silicon rich to the carbon rich phases, following gases are exposed on the silicon rich 3~(1/2)x3~(1/2) surface; H, O_2 and a mixture gas of H_2 and O_2. In the case of hydrogen-treated 3~(1/2)x3~(1/2) surface, the RHEED rocking curves and the Auger spectrum show good agreement with those of the carbon rich surface. It is concluded that the rearrangement of the 3~(1/2)x3~(1/2) surface in UHV is caused by adsorption of hydrogen on the silicon rich 3~(1/2)x3~(1/2)surface.

机译：通过反射高能电子衍射（RHEED）强度和俄歇电子的摇摆曲线研究了6H-SiC（0001）3〜（1/2）x3〜（1/2）-R30°表面的表面吸附作用光谱学（AES）。在一系列退火过程中，观察到了两种3〜（1/2）x3〜（1/2）表面，即富硅表面和富碳表面。为了找出引起从富硅相向富碳相转变的原因，在富硅3〜（1/2）x3〜（1/2）表面上暴露了以下气体。 H，O_2以及H_2和O_2的混合气体。在氢处理过的3〜（1/2）x3〜（1/2）表面的情况下，RHEED摇摆曲线和俄歇光谱与富碳表面具有很好的一致性。结论是特高压中3〜（1/2）x3〜（1/2）表面的重排是由于富硅3〜（1/2）x3〜（1/2）表面上氢的吸附引起的。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.705-708|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
Tomohiro Aoyama; Yoshiyuki Hisada; Shinichi Mukainakano; Ayahiko Ichimiya;
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作者单位

Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
6H-SiC; adsorbate effects; AES; RHEED rocking curves; surfaces;

机译：6H-SiC;吸附效应; AES; RHEED摇摆曲线;表面;

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1. (root 3 x root 3) R30 degrees reconstruction of the 6H-SiC (0001) surface: A simple T4 Si adatom structure solved by grazing-incidence x-ray diffraction [J] . Coati A., Garreau Y., Pinchaux R., Physical Review, B. Condensed Matter . 1999,第19期

机译：（根3 x根3）6H-SiC（0001）表面的R30度重构：通过掠入射X射线衍射解决的简单T4 Si原子结构
2. The structural models for the (2 root 3 x 2 root 3) R30 degrees reconstructions of 3C-SiC(111) and 6H-SiC(0001) surfaces [J] . Li Y, Wang X, Ye L Journal of Physics. Condensed Matter . 2006,第30期

机译：3C-SiC（111）和6H-SiC（0001）表面的（2根3 x 2根3）R30度重构的结构模型
3. Atomic cracks and (2 3~(1/2)×2×3~(1/2))-R30° reconstruction at 6H-SiC(0001) surface [J] . F. Amy, P. Soukiassian, C. Brylinski Applied Physics Letters . 2004,第6期

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4. Initial Oxidation of 6H-SiC (0001) (3~(1/2) x 3~(1/2))-R30° and 3 x 3 Surfaces Studied by AES and RHEED [C] . T. Aoyama, W. Voegeli, A. Ichimiya, International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

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Adsorbate Effects of the Surface Structure of 6H-SiC(0001) 3~(1/2) x 3~(1/2)-R30°

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